AI 中文总结
该研究开发了400℃以下在硅上直接生长的多晶金刚石薄膜，其室温热导率达73、86 W·m⁻¹·K⁻¹，远高于传统介电材料，可作为后端制程兼容的热扩散介电层。
AI 中文摘要
后端制程（BEOL）的热管理需要可集成于400℃以下热预算内的电绝缘热扩散介质。本文报道了在低于400℃的衬底温度下直接在硅上生长的多晶金刚石薄膜，对平均厚度为760nm和1000nm的两种薄膜进行了拉曼光谱、扫描电子显微镜（SEM）和时域热反射（TDTR）表征。拉曼光谱显示出尖锐的金刚石峰及少量非金刚石碳的特征，SEM揭示了横向生长和大晶粒尺寸。在室温至100℃范围内进行了温度依赖的TDTR测量，敏感性分析表明垂直面热导率的敏感性与平面内热导率相当。据此，考虑近各向同性晶粒结构，采用各向同性热模型分析薄膜，得到室温下有效热导率分别为73 W·m⁻¹·K⁻¹和86 W·m⁻¹·K⁻¹。这些值比传统介电材料高约两个数量级，证明了低温生长金刚石薄膜作为介电热扩散层的潜力。
英文摘要
Back-end-of-line (BEOL) thermal management requires electrically insulating heat-spreading dielectric that can be integrated within thermal budgets below 400 C. Here, we report polycrystalline diamond films grown directly on Si at a substrate temperature below 400C. Two films with average thickness of 760 and 1000 nm were characterized by Raman spectroscopy, scanning electron microscopy (SEM), and time-domain thermoreflectance (TDTR). Raman spectra show a sharp diamond peak with minor signatures of non-diamond carbon, while SEM reveals lateral growth and large grain size. Temperature dependent TDTR measurements were performed from room temperature to 100C. Sensitivity analysis indicates that the sensitivity of cross-plane thermal conductivity is comparative to the in-plane thermal conductivity. Accordingly, the films were analyzed using an isotropic thermal model by considering the nearly-isotropic grain structure, yielding room temperature effective thermal conductivity of 73 and 86 W m-1 K-1, respectively. These values are about two orders of magnitude higher than those of conventional dielectric materials and demonstrate the potential of diamond films grown at low temperatures as dielectric heat-spreading layers.
