AI 中文总结
研究首次测量通用InP波导的后向受激布里渊散射，利用InGaAsP弱引导压力波获得高布里渊增益，在可及的光子集成平台中实现了高SBS增益系数
AI 中文摘要
我们首次测量了通用InP波导中的后向受激布里渊散射（SBS），其由InGaAsP中弱引导的压力波介导，布里渊增益增强至$g_B/Q_m = 3.5 \u00b1 0.6~\text{W}^{-1} \text{m}^{-1}$，在成熟的、可通过晶圆厂获取的光子集成平台中观测到SBS增益系数高达$737 \u00b1 54~\text{W}^{-1} \text{m}^{-1}$
英文摘要
We report the first measurement of backward stimulated Brillouin scattering (SBS) in generic InP waveguides, supporting enhanced Brillouin gain of $g_B/Q_m = 3.5 \pm 0.6~\text{W}^{-1} \text{m}^{-1}$ mediated by weakly-guided pressure waves in InGaAsP. This leads to SBS gain coefficients as high as $737 \pm 54~\text{W}^{-1} \text{m}^{-1}$, observed in a mature, foundry-accessible photonic integration platform.
Comments10 pages, 6 figures
