揭示薄膜钽酸锂上电荷动力学对高消光比宽脉冲产生的影响
Unveiling charge dynamics on the generation of high extinction wide pulse generation on thin-film lithium tantalate
AI总结：
该研究通过实验对比TFLT与TFLN调制器，揭示TFLT因缺陷电荷载流子激活能大而产生无失真高消光比宽脉冲，对集成量子光子技术意义重大。
AI中文摘要：
我们实验演示了在薄膜钽酸锂（TFLT）中产生高消光比光脉冲，实现了具有陡峭上升和下降沿的宽脉冲宽度范围，且无明显失真或长时间拖尾。我们在相同测量条件下与薄膜铌酸锂（TFLN）调制器进行了直接的一对一比较。研究结果表明，在TFLN中观察到的失真脉冲响应源于电荷激活与输运，而TFLT中的无失真响应则由缺陷相关电荷载流子的显著更大激活能所实现。这一更大的激活势垒抑制了漏电流诱导的充电动力学，从而实现稳定且无失真的脉冲产生。在TFLT中成功产生高消光比、无失真光脉冲，可在集成量子光子技术中发挥重要作用，尤其适用于量子比特制备、测量及快速反馈电路。
英文摘要：
We experimentally demonstrate high-extinction optical pulse generation in thin-film lithium tantalate (TFLT), achieving a wide range of pulse widths with sharp rise and fall edges, without measurable distortion or long temporal tails. We further provide a direct one-to-one comparison with thin-film lithium niobate (TFLN) modulators under identical measurement conditions. Our results reveal that the distorted pulse response observed in TFLN originates from charge activation and transport, whereas the distortion-free response in TFLT is enabled by the substantially larger activation energy of defect-related charge carriers. This larger activation barrier suppresses leakage-current-induced charging dynamics, thereby enabling stable and distortion-free pulse generation. The successful generation of high-extinction, distortion-free optical pulses in TFLT can play a significant role in integrated quantum photonic technologies, particularly for qubit preparation, measurement, and fast feedback circuits.
