用于超纳米级二维材料晶体管的超低p型接触电阻
Ultralow p-type contact resistance for ultra-nanoscaled 2D-materials transistors
浏览论文内容
中文总结 AI 辅助
针对二维超纳米级FET的p型接触电阻瓶颈，开发自洽接触电阻模型，提出两种拓扑半金属电极，实现接近量子极限的超低接触电阻，明确亚10nm沟道缩小的关键挑战。
中文摘要 AI 辅助
高接触电阻是二维（2D）材料晶体管实用化的主要瓶颈之一，尤其针对p型晶体管及未来的二维超纳米级（亚10nm）场效应晶体管（FET，包括PMOS和CMOS）。我们开发了金属-二维半导体-金属器件的自洽接触电阻模型，以捕获垂直和边缘两种构型的关键界面物理特性。该模型已通过近期多种p型和n型接触的实验验证。对于给定的一组材料，该模型可确定接触电阻在宽范围器件参数下的缩放规律，这些参数包括沟道长度（从数百纳米缩小至亚10nm）、二维材料的掺杂浓度与迁移率、电极的接触长度以及外加电压。这些结果明确了降低p型二维半导体WSe₂接触电阻的关键因素，该电阻需对应亚10nm沟道长度尺度，且可通过未来实验轻松实现。研究发现，源极限制电流饱和是将二维FET缩小至亚10nm沟道长度的关键挑战。我们提出两种拓扑半金属作为潜在电极，用于二维p型半导体WSe₂，其预测接触电阻R_c<100Ω·μm，接近量子极限。该模型还通过计算成本高昂的全量子原子模型进行了验证，该模型目前仅适用于几纳米尺度。
英文摘要
High contact resistance is one of the main bottlenecks for practical two-dimensional (2D) materials transistors, especially for p-type transistors and future 2D ultra-nanoscaled (sub-10 nm) FETs (PMOS + CMOS). We develop self-consistent contact resistance models for metal-2D semiconductor-metal devices to capture the essential interface physics for both vertical and edge configurations. Our calculations have been verified with various recent experiments of p-type and n-type contacts. For a given set of materials, the model determines the scaling of contact resistance over a wide range of device parameters including channel length (100s nm down to sub-10 nm), doping and mobility of the 2D materials, contact length of the electrodes, and applied voltages. These results identify the key factors in order to reduce the contact resistance for p-type 2D semiconductor WSe$_2$ towards the sub-10 nm channel length scale that are readily to be realized by future experiments. It is found that the effect of source-limited current saturation is the key challenge for down scaling 2D FET to sub-10 nm channel length. Two topological semi-metals as potential electrodes are proposed for 2D p-type semiconducting WSe$_2$ with our predicted contact resistance $R_c<$ 100 $Ω\; {\rm μm}$ approaching the quantum limit. Our model is also verified with the computational expensive full quantum atomistic model that is currently limited to a few nm scale.
