AI 中文总结
研究采用HPHT温度梯度法，以Ni-Cr为溶剂催化剂，在1950℃下生长一周，成功制得尺寸超10mm的厘米级cBN单晶，其形貌因金属溶剂中硼氮扩散率低呈细长状，为大尺寸cBN晶体制备提供了可行方案。
AI 中文摘要
采用基于Ni-Cr的溶剂催化剂，通过高温高压（HPHT）温度梯度法生长出尺寸超过10毫米的立方氮化硼（cBN）单晶。相较于此前报道的最大约3毫米的晶体尺寸，此次改进是通过在源温度1950℃下持续一周生长过程中保持稳定的前驱体通量实现的。与使用相同HPHT装置生长出近乎等轴形状的金刚石不同，cBN晶体呈细长形状，我们将这种cBN形貌归因于金属溶剂中硼和氮物种的有效扩散率相对较低，导致在BN源附近发生局域生长。
英文摘要
Single crystals of cubic boron nitride (cBN) exceeding 10 mm in size were grown by the high-pressure high-temperature (HPHT) temperature-gradient method using a Ni-Cr-based solvent catalyst. Compared with the previously reported maximum crystal size of approximately 3 mm, this improvement was achieved by maintaining a stable precursor flux during one week of growth at a source temperature of 1950 °C. In contrast to diamonds, which were grown with the same HPHT cell and showed nearly isometric shapes, the cBN crystals had elongated shapes. We attribute this cBN morphology to a localized growth near the BN source due to the relatively low effective diffusivity of boron and nitrogen species in the metallic solvent.
