AI 中文总结
该研究报道了晶圆级半导体工艺制备的硅基固态纳米孔的忆阻行为，揭示其迟滞电流-电压特性的物理机制，确立其为可扩展离子忆阻元件，为离子神经形态器件设计提供指导。
AI 中文摘要
纳米流体忆阻器的电导通过依赖历史的离子传输和动态界面过程演变，是离子神经形态应用的有前途的构建模块。然而，大多数现有设计依赖生物纳米孔、聚合物和二维材料，这限制了可扩展制造，并给离子计算电路和系统的集成带来挑战。在此，我们报告基于晶圆级半导体工艺制造的硅基固态纳米孔（SSNPs）的忆阻行为。SSNPs表现出迟滞电流-电压特性，其与电压扫描频率、电解质浓度和纳米孔几何形状相关。为研究其记忆特性的物理起源，将SSNPs的测量电流分解为电阻、电容和忆阻分量。开发了离子吸附-脱附动力学以解释和预测忆阻行为。动力学系统分析进一步表明，忆阻行为源于延迟弛豫，从而将测量的迟滞与观察到的适应性离子响应联系起来。这些发现共同确立了原生SSNPs作为可扩展的离子忆阻元件，并为纳米限域下的忆阻行为提供了广义电动机制。所得分析框架将器件表征与潜在动力学联系起来，加深了对机制的理解，并指导离子神经形态器件的设计。
英文摘要
Nanofluidic memristors whose conductance evolves through history-dependent ionic transport and dynamic interfacial processes are promising building blocks for ionic neuromorphic applications. However, most existing designs rely on biological nanopores, polymers, and two-dimensional materials, which limit scalable fabrication and poses challenges to integration of ionic computing circuits and systems. Here, we report memristive behaviors of silicon-based solid-state nanopores (SSNPs) fabricated based on wafer-scale semiconductor processes. The SSNPs exhibit hysteretic current-voltage characteristics with a dependence on voltage sweeping frequency, electrolyte concentration, and nanopore geometry. To investigate the physical origin of their memory feature, the measured current of the SSNPs is decomposed into resistive, capacitive, and memristive components. An ion adsorption-desorption kinetics is developed to explain and predict the memristive behavior. A dynamical system analysis further reveals that the memristive behavior arises from delayed relaxation, thereby linking the measured hysteresis to the observed adaptive ionic response. Together, these findings establish native SSNPs as scalable ionic memristive elements and provide a generalized electrokinetic mechanism for memristive behavior under nanoconfinement. The resulting analytical framework connects device characterization with the underlying dynamics, deepens mechanism understanding, and guides the design of ionic neuromorphic devices.
