用于紫外光电子学的GaN/Ga2O3纳米线异质结构的生长与表征
Growth and characterization of GaN/Ga2O3 Nanowire Heterostructures for Ultraviolet Optoelectronics
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中文总结 AI 辅助
该研究采用多种沉积技术制备GaN/β-Ga2O3平面及核/壳纳米线异质结构，经表征证实其具备整流特性与自供电紫外响应，为相关光电器件研发提供了可行路径。
中文摘要 AI 辅助
本研究制备并研究了紫外波段的GaN/β-Ga2O3异质结构，涵盖平面和纳米线两种几何结构：采用脉冲激光沉积法、以液态镓为靶材的反应磁控溅射法沉积β-Ga2O3；采用金属有机化学气相沉积法生长GaN纳米线阵列及平面型掺Mg的p型GaN层。通过X射线衍射、X射线光电子能谱、原子力显微镜、扫描电子显微镜等结构与形貌研究，证实可精确控制薄膜的均匀性与厚度。对平面型n-Ga2O3/p-GaN异质结二极管进行电学与光电表征，其表现出显著的整流特性、高正向电流，且在零外加偏压下呈现可见盲紫外光电响应，具备本征自供电工作能力。此外，开发并系统研究了GaN/β-Ga2O3核/壳纳米线异质结构，重点关注形貌控制与工艺优化，探究了沉积参数对壳层厚度、均匀性及锥度的影响，实现了β-Ga2O3在GaN纳米线M面晶面上的包覆性提升。研究结果表明，物理气相沉积技术可用于制备GaN/β-Ga2O3异质结构，为基于纳米线的紫外光电子器件研发奠定了基础。
英文摘要
Ultraviolet-range GaN/b-Ga2O3 heterostructures were fabricated and investigated in both planar and nanowire geometries using pulsed laser deposition and reactive magnetron sputtering from a liquid gallium target for b-Ga2O3 deposition, while both GaN nanowire arrays and planar p-type Mg-doped GaN layers were grown by metal-organic chemical vapor deposition. Precise control of film uniformity and thickness was achieved as confirmed by structural and morphology studies using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and scanning electron microscopy. Planar n-Ga2O3/p-GaN heterojunction diodes were electrically and photoelectronically characterized, exhibiting pronounced rectifying behavior, high forward current and a visible-blind ultraviolet photoresponse under zero external bias, demonstrating intrinsic self-powered operation. Furthermore, GaN/b-Ga2O3 core/shell nanowire heterostructures were developed and systematically studied with a focus on morphology control and process optimization. The influence of deposition parameters on shell thickness, uniformity, and tapering was investigated, enabling improved conformality of the b-Ga2O3 coating on the M-plane facets of GaN nanowires. The results highlight the viability of physical vapor deposition techniques for forming GaN/b-Ga2O3 heterostructures and establish a pathway toward nanowire-based ultraviolet optoelectronic devices.
