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绝缘衬底(Al)GaAs波导中2μm附近SPDC光子对的联合光谱表征

Joint spectral characterization of SPDC photon pairs near 2 $μ$m in (Al)GaAs-on-insulator waveguides

Alexandre Z. Leger, Emil Z. Ulsig, Samuel E. Fontaine, Dileep V. Reddy, Eric J. Stanton, Lynden K. Shalm, Richard P. Mirin, Martin J. Stevens, J. E. Sipe, Nicolas Volet, Deny R. Hamel

arXiv 2608.03950首次发表:更新:

AI 中文总结

该研究针对2μm波段集成SPDC光子对源,利用绝缘衬底(Al)GaAs波导平台实现高效光子对产生,完成该波长下集成SPDC源的首次直接联合光谱表征,为相关量子应用提供支撑。

AI 中文摘要

集成光子对源是基于芯片的量子计算、通信和计量学的核心组件。尽管这类光源已在传统电信波长下得到验证,但2μm波段的探索相对较少,不过其在自由空间量子通信、新兴光纤网络中的低损耗传输以及与硅光子平台集成方面具有优势。本文中,我们在直型GaAs和AlGaAs绝缘衬底波导中实现了自发参量下转换(SPDC)。该平台具备强二阶非线性和几何可调色散,有利于实现高效的片上光子对产生。对联合光谱强度和预示二阶关联函数的测量显示,在2μm附近存在宽带发射,且具有强光谱反关联。据我们所知,这是该波长范围内集成SPDC源的首次直接联合光谱表征。

英文摘要

Integrated photon-pair sources are a core component of chip-based quantum computing, communication, and metrology. Although such sources have been demonstrated at conventional telecom wavelengths, the 2 $μ$m band remains comparatively less explored, despite offering advantages for free-space quantum communication, low-loss transmission in emerging fiber networks, and integration with silicon photonic platforms. In this paper, we demonstrate spontaneous parametric down-conversion (SPDC) in straight GaAs- and AlGaAs-on-insulator waveguides. This platform offers strong second-order nonlinearity and geometry-tunable dispersion, which are advantageous for efficient on-chip pair generation. Measurements of the joint spectral intensity and heralded second-order correlation function show broadband emission around 2 $μ$m with strong spectral anti-correlations. To our knowledge, this is the first direct joint-spectral characterization of an integrated SPDC source in this wavelength regime.

Comments14 pages, 8 figures, 2 tables

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