用于CMOS兼容热电器件的外延SiGeSn合金
Epitaxial SiGeSn alloys for CMOS-compatible thermoelectric devices
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中文总结 AI 辅助
该研究评估新型CMOS兼容材料SiGeSn合金的热电性质，发现其在片上温度区间的品质因数ZT超1，功率因子具竞争力，有望用于CMOS兼容热电器件。
中文摘要 AI 辅助
将热电器件集成到主流微电子技术平台中，可能在所谓的绿色信息技术（Green-IT）领域的多个方面取得重大突破。本文评估了新型CMOS兼容材料体系——异质外延SiGeSn合金的热电性质，以评估其在热电器件中的潜在应用。为此，基于通过3-ω测量得到的SiGeSn/Ge/Si层实验晶格热导率较低，约为~1-2 W/m·K，考虑该多谷材料体系特有的谷间散射过程，通过玻尔兹曼输运方程计算其品质因数。在300-400 K范围内（即典型的片上温度）工作时，p型和n型材料的品质因数ZT均超过1。在该温度区间内，预测的功率因子也具有约20 μW/cm·K²的极具竞争力的数值。我们的发现表明，这类新型硅基材料具有极佳的实际应用前景，可进一步推动该领域的科学研究。
英文摘要
The integration of thermoelectric devices into mainstream microelectronic technological platform could be a major breakthrough in various fields within the \emph{so-called} Green-IT realm. In this article, the thermoelectric properties of heteroepitaxial SiGeSn alloys, a novel CMOS compatible material system, are evaluated to assess their possible application in thermoelectric devices. To this purpose, starting from the experimentally low lattice thermal conductivity of SiGeSn/Ge/Si layers of about $\sim$1-2 W/m$\cdot$K assessed by means of 3-$ω$ measurements, the figure of merits are calculated through the use of Boltzmann transport equation, taking into account the relevant inter-valley scattering processes, peculiar of this multi-valley material system. Values for the figure of merit $ZT$ exceeding $1$ have been obtained for both p- and n- type material at operating temperatures within the 300---400 K range, i.e. at a typical On-Chip temperatures. In this interval, the predicted power factor also features very competitive values of the order of 20 $\rm{μW/cm\cdot K^2}$. Our finding indicates that this new class of Si-based materials has extremely good prospects for real-world applications, and can further stimulate scientific investigation in this ambit.
