AI 中文总结
本研究针对磁性外尔半金属Mn₃ZnC，探究其磁电阻特性，明确了铁磁与亚铁磁态的磁电阻行为差异，发现其极低场铁磁态的正磁电阻具有罕见性。
AI 中文摘要
磁性材料中的磁电阻（MR）揭示了一种有趣的自旋依赖电子散射，凸显了自旋极化在电子输运性质中的作用。对于拓扑磁性材料而言，有限的贝里曲率还会形成本征散射通道，这一特性使其更具研究价值。本研究报道了反钙钛矿型磁性节点线半金属Mn₃ZnC的磁电阻研究：Mn₃ZnC在约420 K处发生铁磁（FM）转变，随后在约195 K处发生亚铁磁（FIM）转变。研究聚焦于磁电阻数据的解释，强调磁电阻与磁化强度的关联：磁化诱导的磁电阻信号在低磁场下呈现相关性，且在亚铁磁与铁磁态中表现出不同行为；与铁磁、亚铁磁态的等温磁化M(H)曲线类似，磁电阻曲线先急剧上升，在高场下呈现线性行为。随磁场变化，尖峰状异常会愈发明显，在磁相变处消失，升温后重新出现；亚铁磁态中磁电阻曲线的符号变化归因于载流子迁移率的剧烈改变。值得注意的是，该体系在极低场的铁磁态中表现出正磁电阻，这一特性颇为罕见。
英文摘要
The magnetoresistance (MR) in magnetic materials reveal an intriguing spin-dependent electron scattering, highlighting the role of spin polarization on the electronic transport properties. This becomes even more interesting for the topological magnetic materials where a finite Berry curvature leads to an intrinsic scattering channel also. In this report, we investigate MR of Mn$_{3}$ZnC, an antiperovskite magnetic nodal line semimetal. Mn$_{3}$ZnC shows a ferromagnetic (FM) transition at $\sim$ 420 K, followed by an ferrimagnetic (FIM) transition at $\sim$ 195 K. We focus on the interpretation of MR data and highlight the relation between MR and its magnetization. The signature of magnetization induced MR shows correlation at low magnetic fields and displays distinct behaviors in the FIM and FM states. Similar to the isothermal magnetization M(H) curve of FM and FIM state, the MR curves exhibit a sharp increase, followed by a linear behavior at higher fields. As the magnetic field varies, the cusp-like anomaly becomes more pronounced, and vanishes at the magnetic phase transition, which then reappears as the temperature increases. The sign change in the MR curves in the FIM state is attributed to a drastic change in the carrier mobility. Interestingly, this system shows a positive MR in FM state at very low field, which is quite unusual.
Comments7 pages, 4 figures
