AI 中文总结
本研究探究hBN中量子发射体的自旋与光学性质关联，可控合成碳掺杂hBN的高密度自旋复合缺陷，明确零场分裂参数与零声子线的关联，提升窄带缺陷光子收集效率，推进ODMR活性量子发射体的确定性制备。
AI 中文摘要
可光学寻址的六方氮化硼（hBN）自旋缺陷非常适合近表面量子传感，它们在室温下能提供明亮、波长可调的单光子发射，具有高光学检测磁共振（ODMR）对比度。本研究在碳掺杂hBN薄片中可控合成了高密度自旋复合缺陷，发现零场分裂参数D与发射体的零声子线直接相关，但ODMR对比度无此关联；进一步分析了单个窄带缺陷，其ODMR对比度达68%，并通过固体浸没透镜将其光子收集效率提升了约40%。通过推进自旋复合缺陷的实用合成及对其微观起源的理解，本研究推动了确定性制备ODMR活性量子发射体的进程。
英文摘要
Optically addressable spin defects in hexagonal boron nitride (hBN) are well suited for near-surface quantum sensing. They offer bright, wavelength-tunable single-photon emission with high optically detected magnetic resonance (ODMR) contrast at room temperature. Here we controllably synthesise a high density of spin-complex defects in carbon-doped hBN flakes. We find that the zero-field splitting parameter D is directly correlated with the zero-phonon line of an emitter, while the ODMR contrast shows no such correlation. We further analyse an individual narrowband defect showing 68% ODMR contrast and enhance its photon collection by ~40% using a solid immersion lens. By advancing both the practical synthesis of the spin complexes and the understanding of their microscopic origin, our results move us toward the deterministic creation of ODMR-active quantum emitters
