AI 中文总结
本研究利用扭解耦单层石墨烯偏置双层石墨烯，揭示零位移场下的三重简并量子霍尔态，证实双层石墨烯电子相互作用在邻近单层石墨烯时保留，展现CVD石墨烯多层膜探索物质关联相的潜力。
AI 中文摘要
Bernal堆叠双层石墨烯（BLG）具有与价带鞍点处低能 Lifshitz 跃迁相关的关联电子相，要进入该调控区域需同时具备超低电荷无序度和垂直电场控制。本研究采用扭解耦单层石墨烯（MLG）在无外部位移场（D）的情况下偏置邻近的BLG，从而在D=0时揭示出三重简并的量子霍尔态，该态可通过掺杂、磁场和电场驱动产生多重跃迁。价带边缘附近的自发对称性破缺由具有异常频率和大准粒子质量的量子振荡的出现所表明。这些结果表明，在原子级邻近的MLG存在时，BLG中的电子相互作用得以保留，同时展示了CVD生长的石墨烯多层膜在探索物质关联相方面的潜力。
英文摘要
Bernal-stacked bilayer graphene (BLG) hosts correlated electronic phases tied to low-energy Lifshitz transitions at saddle points in its valence band. To access this regime, ultralow charge disorder and control over a vertical electric field are simultaneously required. Here, we employ a twist-decoupled monolayer (MLG) to bias a proximal BLG in the absence of an external displacement field (D). We thereby reveal three-fold degenerate quantum Hall states at D = 0, with multiple transitions driven by doping, magnetic and electric field. Spontaneous broken symmetry in the vicinity of the valence band edge is signaled by the emergence of quantum oscillations with anomalous frequencies and large quasiparticle mass. These results indicate that electronic interactions in BLG are preserved in presence of an atomically close MLG, while showcasing the potential of CVD-grown graphene multilayers for the exploration of correlated phases of matter.
Journal refPhysical Review B 114, L111402 (2026)
