一种高Q值分裂腔，可实现两个量子点的独立电调谐
A high-Q Split Cavity Enabling Independent Electrical Tuning of two Quantum Dots
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中文总结 AI 辅助
该研究设计了GaAs基光子晶体分裂腔，可独立电调谐两个InAs量子点，其平均Q≥20000，为实现两量子点强耦合生成多维光子图态提供了实验路径。
中文摘要 AI 辅助
腔介导的强耦合是量子光子学的重要工具。然而，基于物质的量子比特集合存在固有不均匀性，需独立调谐才能使多个量子比特与单腔模式共振。我们设计、制备并表征了一种GaAs基光子晶体分裂腔，该腔由两个电学上不同的部分组成，可施加独立电场，从而独立调谐两个不同的InAs量子点（QDs），使其与腔模式共振。研究表明，尽管该器件为实现两半部分电隔离需要进行切割，但平均品质因子Q≥20000，足以进入强耦合机制。此外，Q值主要受电子束光刻工具的精度和准确度限制，而非侧壁散射。该结果为开发利用两个InAs量子点间受控相互作用的器件提供了可行的实验路径，这种相互作用由与单腔模式的强耦合介导，用于生成多维光子图态。
英文摘要
Cavity-mediated strong coupling is an essential tool for quantum photonics. However, the inherent inhomogeneity in ensembles of matter-based qubits necessitates independent tuning to bring more than one qubit into resonance with a single cavity mode. We present the design, fabrication, and characterization of a GaAs-based photonic crystal split cavity that consists of two electrically-distinct portions, which preserves the ability to apply independent electric fields that would independently tune two distinct qubits based on InAs Quantum Dots (QDs) into resonance with a cavity mode. We show that this device, despite the cut required to electrically isolate the two halves, achieves an average Q $\geq 20,000$, sufficient to enter the strong coupling regime. Moreover, we show that the Q is limited primarily by the precision and accuracy of the e-beam lithography tool, rather than by sidewall scattering. This result creates a realistic experimental path toward devices that use controlled interactions between two InAs QDs, mediated by strong coupling to a single cavity mode, to generate multi-dimensional photon graph states.
