表征氮空位中心的单重态跃迁及其声子边带，用于基于吸收的室温磁力测量
Characterizing the nitrogen-vacancy center singlet transition and its phonon sideband for absorption-based room-temperature magnetometry
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中文总结 AI 辅助
该研究表征了金刚石NV中心单重态跃迁及其声子边带，开发新型方法测量其室温吸收截面，为基于吸收的室温磁力测量提供关键参数。
中文摘要 AI 辅助
近年来，金刚石中的氮空位（NV）中心磁力测量已展现出巨大应用前景。特别地，基于吸收的磁力测量技术采用谐振腔来增强吸收长度，与传统基于读取NV⁻三重态荧光的技术相比，可提升对比度与灵敏度。这类吸收技术依赖于NV⁻单重态零声子线（波长1042nm）及其声子边带处与磁场相关的吸收。我们采用谐振腔增强光谱方法，在室温下对680-1050nm光谱范围内的泵浦激光与微波诱导的谐振腔信号变化进行研究。通过归一化处理，消除谐振腔增强效应，得到吸收与光探测磁共振（ODMR）对比度的准单程值。结果显示，1042nm处对比度最高，但声子边带的多个峰值处也存在高对比度；同时给出了50-80%范围内的谐振腔增强ODMR对比度。此外，我们通过微波诱导的信号变化，采用一种新型方法测量了室温下宽带单重态吸收截面，该方法不受其他缺陷引起的泵浦激光信号变化干扰，可量化单重态跃迁及其整个声子边带的室温吸收强度。根据所用的532nm NV⁻吸收截面，确定1042nm处的吸收截面为σ^★₁₀₄₂=(0.89±0.14)·10⁻²¹ m²或σ^△₁₀₄₂=(2.9±0.5)·10⁻²¹ m²。
英文摘要
Magnetometry with nitrogen-vacancy (NV) centers in diamond has shown great promise in recent years. In particular, absorption-based magnetometry techniques, employing a cavity to enhance the absorption length, can improve the contrast and sensitivity compared to conventional techniques based on reading out the NV$^-$ triplet fluorescence. The absorption techniques rely on magnetic-field-dependent absorption at the NV$^-$ singlet zero phonon line at 1042$\,$nm and its phonon sideband. In a cavity-enhanced spectroscopy approach, we study pump-laser- and microwave-induced cavity signal changes at room temperature over a spectral range of 680-1050$\,$nm. Through normalization, we eliminate the cavity-enhancement effect and provide quasi-single-pass values for the absorption and optically detected magnetic resonance (ODMR) contrast. The highest contrast is found at 1042$\,$nm, but multiple points of high contrast are found at the peaks of the phonon sideband. Additionally, cavity-enhanced ODMR contrasts in the range of 50-80$\,\%$ are presented. We further measure the broadband singlet absorption cross section at room temperature with a novel method through microwave-induced signal changes. This method is insensitive to pump-laser-induced signal changes by other defects and quantifies the room-temperature absorption strength of the singlet transition and its entire phonon sideband. We determine the absorption cross section at 1042$\,$nm to be $σ^{\,\bigstar}_{1042}=(0.89\pm0.14)\cdot 10^{-21}\,\text{m}^2$ or $σ^{\,\blacktriangle}_{1042}=(2.9\pm0.5)\cdot 10^{-21}\,\text{m}^2$. depending on the employed 532$\,$nm NV$^-$ absorption cross section.
