MoSe2/WS2莫尔超晶格中层杂化的维格纳晶体
Layer-Hybridized Wigner Crystals in MoSe2/WS2 Moiré Superlattice
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中文总结 AI 辅助
本研究在MoSe2/WS2莫尔超晶格中实现层杂化莫特绝缘体与广义维格纳晶体，揭示了不同电子填充量下电荷有序的调控规律，为研究关联电子态提供了新平台。
中文摘要 AI 辅助
具有II型能带对齐的过渡金属二硫化物莫尔异质双层为层极化广义维格纳晶体提供了多功能平台，其中强库仑相互作用在分数晶格填充时驱动电荷有序。在有限的层间带隙偏移下，面外电场可通过共振调谐层分辨莫尔能带，并实现可控的层间杂化。尽管此前已证明存在杂化莫特绝缘体，但分数电荷有序态能否在这种杂化下存活仍不明确。本研究通过驱动H堆叠MoSe2/WS2莫尔异质双层发生I型到II型的能带对齐转变，实现了层杂化莫特绝缘体和广义维格纳晶体。在每个莫尔晶胞电子填充量低于1时，隧穿使电子离域并改变维格纳结晶；而在填充量高于1时，库仑排斥力克服隧穿，有利于层分离占据，从而稳定更强的电荷有序态。这些结果确立了电可调谐的杂化莫尔异质双层作为强大平台，可用于工程化关联电荷有序，探索分数陈相和 emergent 磁性。
英文摘要
Transition metal dichalcogenide moiré heterobilayers with type-II band alignment provide a versatile platform for layer-polarized generalized Wigner crystals, in which strong Coulomb interactions drive charge ordering at fractional lattice fillings. With a finite interlayer band offset, an out-of-plane electric field can tune layer-resolved moiré bands through resonance and enable controllable interlayer hybridization. Although hybridized Mott insulators have been previously demonstrated, whether fractional charge-ordered states can survive such hybridization remains elusive. Here we drive an H-stacked MoSe2/WS2 moiré heterobilayer through a type-I-to-type-II band-alignment transition and realize layer-hybridized Mott insulator and generalized Wigner crystals. For fillings below one electron per moiré cell, tunneling delocalizes electrons and modifies Wigner crystallization. However, above one electron per cell, Coulomb repulsion overcomes tunneling and favors layer-separated occupation, stabilizing stronger charge-ordered states. These results establish electrically tunable hybridized moiré heterobilayers as a powerful platform for engineering correlated charge order and exploring fractional Chern phases and emergent magnetism.
