主动钝化技术通过原位热机械可视化调控GaN晶体管热点位置
Active Passivation Tunes Hotspot Locations in GaN Transistors with In Situ Thermal Mechanical Visualization
AI总结：
该研究提出主动钝化技术，通过调整GaN晶体管的主动钝化层长度调控热点位置，结合原位热机械可视化与多物理场模拟揭示其机制，为功率电子学设计提供指导。
AI中文摘要：
高效散热在新型电子器件中已变得至关重要。然而，现有多数研究主要聚焦于散热路径的工程设计，在很大程度上忽略了热源本身的固有行为。本文展示了一种主动钝化技术，可主动调控GaN晶体管的热点位置：通过调整主动钝化层（AP层）的长度，热点可从栅极边缘转移至漏极侧的AP层边缘，建立起明确的一一对应空间关联。结合显微拉曼热成像的原位热机械可视化与多物理场电热机械模拟，可直接捕捉温度与热应力分布的空间再分布。电学分析证实，该热点迁移由峰值电场的空间偏移与局域焦耳热驱动。这种主动热源调控策略为功率电子学提供了关键的设计指导。
英文摘要：
Efficient thermal dissipation has become critical in emerging electronic devices. However, most existing studies have primarily focused on engineering heat dissipation pathways, largely overlooking the intrinsic behavior of the heat source itself. We demonstrate an active passivation technology that proactively tunes hotspot locations in GaN transistors. By adjusting the active passivation layer length, the hotspot is shifted from the gate edge to the drain-side AP edge, establishing a clear one-to-one spatial correlation. In-situ thermal-mechanical visualization via micro-Raman thermography, combined with multi-physics electro-thermal-mechanical simulations, directly captures the spatial redistribution of both temperature and thermal stress profiles. Electrical analysis confirms that this hotspot migration is driven by the spatial shift of the peak electric field and localized Joule heating. This proactive heat-source tuning strategy provides critical design guidelines for power electronics.
