插层TaSe2双层结构中的体伊辛超导电性
Bulk Ising superconductivity in an intercalated TaSe2 bilayer structure
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中文总结 AI 辅助
本研究合成插层2Hb-TaSe2双层，通过电阻率、能带结构等测量证实其存在体伊辛超导电性，为寻找体伊辛超导体提供了新的见解。
中文摘要 AI 辅助
体系统中的伊辛自旋轨道耦合因能便捷构建自旋轨道环境并产生奇异量子现象而受到广泛关注。本研究合成了具有非中心对称结构的插层2Hb-TaSe2双层，通过多方面分析，为体伊辛超导电性的出现提供了多条证据。电阻率测量显示各向异性超导行为，其中面内上临界场Bc2∥异常大，超过泡利极限Bp。能带结构计算进一步表明存在能带分裂及面外自旋极化。这些观测共同指向伊辛超导电性的存在。对厚度依赖的Bc2∥/Bp比值及超导二极管效应的额外测量，不仅进一步证实该材料的伊辛超导特性，还揭示了体伊辛超导电性随厚度演化的额外特征。本研究结果为寻找体伊辛超导体提供了有价值的见解。
英文摘要
Ising spin-orbit coupling in bulk systems has drawn considerable interest for its ability to conveniently construct spin-orbit environments and enable exotic quantum phenomena. In this work, we synthesize intercalated 2Hb-TaSe$_2$ bilayers with noncentrosymmetric structure and, through multifaceted analysis, present multiple lines of evidence for the emergence of bulk Ising superconductivity. Resistivity measurements reveal anisotropic superconducting behavior, with a remarkably large in-plane upper critical field $B_{c2}^{\|}$ that exceeds the Pauli limit $B_{p}$. Band structure calculations further show band splitting accompanied by out-of-plane spin polarization. Collectively, these observations point to the presence of Ising superconductivity. Additional measurements of the thickness-dependent ratio $B_{c2}^{\|}$/$B_{p}$ and the superconducting diode effect not only further support the Ising superconducting nature of this material, but also reveal additional features of bulk Ising superconductivity evolving with thickness. Our findings provide valuable insights that may contribute to the search for bulk Ising superconductors.
