AI 中文总结
针对1064 nm下薄膜铌酸锂器件的光纤-芯片耦合难题，提出双层逆锥模式转换器，实测TE模式耦合损耗1.9 dB/端面、1 dB带宽1055-1085 nm，仿真显示透镜光纤下可低至0.48 dB/端面，实现高效耦合。
AI 中文摘要
对于工作在1064 nm的薄膜铌酸锂（TFLN）器件，高效的光纤-芯片耦合仍是一项挑战。本文制备并表征了一种基于双层逆锥的片上光模式转换器，该结构对TE模式的耦合损耗为每个端面1.9 dB，1 dB带宽覆盖1055至1085 nm。还测量了偏振相关的横向和纵向对准容差。理论与仿真分析表明，当使用模场直径为2.5 μm的透镜光纤时，耦合损耗可降至每个端面低至0.48 dB。这些结果证明了为1064 nm下的片上光耦合提供高效解决方案的可行性。
英文摘要
Efficient fiber-to-chip coupling remains challenging for thin-film lithium niobate (TFLN) devices operating at 1064 nm. Here, we fabricate and characterize an on-chip optical mode converter based on a bilayer inverse taper. The proposed structure demonstrated a coupling loss of 1.9 dB per facet for the TE mode, with a 1 dB bandwidth spanning 1055--1085 nm. The polarization-dependent alignment tolerance was measured along the lateral and vertical directions. Theoretical and simulation analyses indicate that, when using a lensed fiber with a mode field diameter of 2.5 $μ$m, the coupling loss can be reduced to as low as 0.48 dB per facet. These results demonstrate the feasibility of providing a high-efficiency solution for on-chip optical coupling at 1064 nm.
Comments10 pages, 5 figures
