AI 中文总结
本研究结合实验与理论，揭示磁性异质结构反常霍尔电压随相邻非磁性导电层厚度、电阻率的普适标度关系，明确其机制为串联电阻效应，为相关自旋电子现象研究提供关键信息。
AI 中文摘要
磁性异质结构的反常霍尔电压作为磁化状态及其与多种自旋电子效应相互作用的指标发挥着关键作用。在本研究中，我们结合输运实验、解析推导和有限元分析，报道了磁性异质结构的反常霍尔电压随非磁性导电层（如普通金属）的厚度和电阻率呈现普适且显著标度关系的观测结果、机制及影响。我们确定该机制是磁性异质结构内磁性层与非磁性层的串联电阻效应，与非磁性层向磁性层的费米面变化或角动量注入无关。我们还表明，磁性异质结构的谐波霍尔电压分析精度不受串联电阻效应导致的反常霍尔电压及其他横向电压测量不足的影响。这些发现为理解涉及反常霍尔及其他横向电压的多种自旋电子现象提供了关键信息。
英文摘要
The anomalous Hall voltage of magnetic heterostructures plays a key role as the indicator for the magnetization state and its interplay with a variety of spintronic effects. In this letter, we report the observation, mechanism, and impact of the universal, dramatic scaling of the anomalous Hall voltage of magnetic heterostructures with the thickness and resistivity of the nonmagnetic conducting layers (e.g., normal metal) by combining transport experiments, analytical derivation, and finite-element analyses. We identify that the mechanism is the serial resistor effect of the magnetic and non-magnetic layers within the magnetic heterostructures and irrelevant to any Fermi surface variation or angular momentum injection from the nonmagnetic layer to the magnetic layer. We also show that the accuracy of the harmonic Hall voltage analyses of magnetic heterostructures are unaffected by the under-measuring of the anomalous Hall voltage and other transverse voltages due to the serial resistor effect. These findings provide crucial information for understanding a variety of spintronic phenomena involving the anomalous Hall and other transverse voltages.
