AI 中文总结
该研究针对6G后通信需求，开发了硅基集成的CoFeB磁振子器件，通过电流驱动与电压控制两种方式实现自旋波调谐，可支持最高约12 GHz的信号处理。
AI 中文摘要
在寻找支持向“6G后”电信过渡的新型技术平台过程中，磁振子学正成为可行途径，主要因其与UWB-FR3频段的本征兼容性及易调谐特性。本文提出一种基于CoFeB磁振子波导的概念验证器件，完全集成于硅基，展示了集成方法的所有关键特征，该方法基于共集成的硬磁微磁体、磁振子导管、可重构软磁元件及MEMS。硅衬底中嵌入的SmCo微磁体提供了可实现约12 GHz工作的偏置场。实时调谐通过两种方式实现：其一，通过集成电流线产生额外局域磁场，实现电流驱动控制，可连续调谐反向体积自旋波传播；其二，通过将NiFeMo软磁元件集成到压电MEMS悬臂梁上并倒装键合到磁振子器件，实现电压控制调谐。驱动时，悬臂梁使NiFeMo靠近永久微磁体，捕获杂散场，由此产生的电压控制位移可调制硬磁与软磁元件间的耦合，有效降低CoFeB波导上的局域偏置场，实现对Damon–Eshbach自旋波的精细控制。
英文摘要
In the search for novel technology platforms supporting the transition towards ''beyond 6G'' telecommunications, magnonics is emerging as a viable route, primarily due to its intrinsic compatibility with the UWB-FR3 bands and its easy tunability. In this paper, we present a proof-of-concept device based on a CoFeB magnonic waveguide, fully integrated on silicon, which demonstrates all the key features of our integration approach, based on co-integrated hard magnetic micromagnets, magnonic conduits, reconfigurable soft magnetic elements and MEMS. The bias field enabling operation up to about 12 GHz is provided by SmCo micromagnets embedded in the silicon substrate. Real-time tunability is implemented in two ways. First, current-driven control is achieved via an integrated current line that generates an additional localized magnetic field, enabling continuous tuning of Backward Volume spin-wave propagation. Second, we achieve voltage-controlled tunability by integrating a NiFeMo soft magnetic element onto a piezoelectric MEMS cantilever and flip-chipping it onto the magnonic device. Upon actuation, the cantilever brings the NiFeMo into proximity with the permanent micromagnets, where it captures the stray field. The resulting voltage-controlled displacement modulates the coupling between the hard and soft magnetic components, effectively reducing the local bias field on the CoFeB waveguide and enabling fine control of Damon--Eshbach spin waves.
