通过量子阱的极化子辅助非弹性隧穿
Polariton-Assisted Inelastic Tunneling through a Quantum Well
AI总结：
该研究针对掺杂量子阱与双金属腔光子模式强相互作用的电子输运，用非平衡格林函数推导任意耦合强度下的电流表达式，发现特定条件下腔极化子的输运特征及非弹性边带，为检测半导体异质结构的腔诱导电荷输运修改提供了现实路径。
AI中文摘要：
我们研究了通过与双金属腔中受限光子模式强相互作用的掺杂量子阱的电子输运。利用非平衡格林函数形式，我们推导了适用于超过相关损耗率的任意集体光-物质耦合强度的电流紧凑表达式。我们表明，当载流子注入速率小于腔诱导的电子展宽时，腔极化子会留下可观测的输运特征。在该 regime 下，电流-电压特性表现出与共振和反共振极化子发射相关的非弹性边带，这些边带在共振照明下会显著增强。我们的结果为检测半导体异质结构中腔诱导的电荷输运修改提供了一条现实途径。
英文摘要：
We investigate electronic transport through a doped quantum well strongly interacting with a photonic mode confined in a double-metal cavity. Using a nonequilibrium Green's function formalism, we derive compact expressions for the current valid for arbitrary collective light--matter coupling strengths exceeding the relevant loss rates. We show that cavity polaritons leave observable transport signatures when the carrier injection rate is smaller than the cavity-induced electronic broadening. In this regime, the current--voltage characteristics exhibit inelastic sidebands associated with resonant and anti-resonant polariton emission, which are strongly enhanced under resonant illumination. Our results provide a realistic route to detecting cavity-induced modifications of charge transport in semiconductor heterostructures.
