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推进脑机接口:高数据速率无电池植入体

Advancing Brain-Machine Interfaces: High Data Rate Battery-Free Implants

Aminolah Hasanvand, Ali Khaleghi, Cyril Beguet, Paul Wanda, Ilangko Balasingham

arXiv 2607.29150首次发表:更新:

AI 中文总结

本文针对可植入无线脑机接口的功耗与高速连接难题,采用射频反向散射与近场无线充电技术,实现高数据速率无电池植入体,初步验证了方法可行性。

AI 中文摘要

可植入无线脑机接口(BMI)在小型化、功耗和数据量方面面临重大挑战。尽管采用高分辨率微电极阵列的系统可实现精准的大脑信号读取和/或刺激,但实现32-128 Mbps的高速无线连接会消耗过多功率,不适合植入电池的长期使用。本文通过采用射频反向散射和近场无线充电解决无线连接与功耗问题,该方法消除了植入体中的收发器电子元件,通过将复杂任务转移到体外读取器电子元件来降低植入体功耗;它还能通过磁耦合为植入式神经记录和刺激芯片提供无线供电,实现完全可植入的脑机接口。本文展示了该设计场景的初步测试结果,证明了所提方法的可行性。

英文摘要

Implantable wireless brain-machine interfaces (BMI) encounter significant challenges in miniaturization, power consumption, and high data volume. While systems utilizing high resolution microelectrode arrays offer precision brain readout and/or stimulation, achieving high-rate wireless connectivity (32-128 Mbps) consumes excessive power, unsuitable for long-term use with implant batteries. This paper addresses wireless connectivity and power challenges by employing radio frequency backscatter and near-field wireless charging. This approach eliminates transceiver electronics in the implantable, reducing implant power consumption by offloading complexity to off-body reader electronics. It enables wireless powering of implantable neural recording and stimulation chips through magnetic coupling, enabling a fully implantable brain-machine interface. We present preliminary test results for this design scenario, demonstrating the feasibility of our approach.

Comments3 pages, 4 figures. Supported by B-CRATOS project, Horizon 2020 FET-OPEN, grant 965044

Journal ref2023 IEEE MTT-S International Microwave Biomedical Conference (IMBioC), 2023, pp. 70-72

DOI:10.1109/IMBIOC56839.2023.10305091

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