二维材料中电子泊肃叶流的稳定性
The stability of electronic Poiseuille flow in two-dimensional materials
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中文总结 AI 辅助
针对二维材料中电子泊肃叶流的稳定性问题，采用修正的Orr-Sommerfeld方程分析其线性稳定性，确定了临界电流、最有利观测情况及不稳定参数，并探讨了相关实验的困难。
中文摘要 AI 辅助
受石墨烯中电子泊肃叶流实验观测的启发[J.A. Sulpizio等人，《自然》576卷，75页（2019）]，我们采用修正的Orr-Sommerfeld方程分析二维材料中电子平面泊肃叶流的线性稳定性。我们计算了使流不稳定所需的临界电流与实验参数的函数关系，确定了观测流不稳定所需电流密度最低的最有利情况，预测了不稳定发生的流向波数和频率，并讨论了探测该现象的实验所面临的困难。
英文摘要
Motivated by the experimental observation of electronic Poiseuille flow in graphene [J.A. Sulpizio et al. Nature 576, 75 (2019)] we analyze the linear stability of plane-Poiseuille flow of electrons in a two-dimensional material using a modified Orr-Sommerfeld equation. We calculate the critical current needed to make the flow unstable as a function of the experimental parameters and characterize the most favorable situation, that is the one needing the lowest current density, to observe flow instability. We predict the streamwise wavenumber and frequency at which the instability occurs and discuss the difficulties of an experiment aimed at probing this phenomenon.
