AI 中文总结
本研究揭示VO₂和V₂O₃的挥发性莫特开关受导电丝形成/湮灭的非易失性存储效应影响，明确两种热区机制，通过保护性电阻和多步协议实现宽温下开关参数调控，为相关器件编程提供新途径。
AI 中文摘要
二氧化钒（VO₂）和三氧化二钒（V₂O₃）是莫特绝缘体，分别在约340K和约160K发生绝缘体-金属转变（IMT），表现为电阻降低几个数量级。这些转变为其挥发性阻变开关（VRS）行为提供了物理基础，使其成为阈值开关器件的理想候选材料。本研究表明，这些材料中的挥发性开关会受到与导电丝的形成和湮灭相关的非易失性过程的强烈影响，这些过程产生显著的存储效应，其中初始开关电压远高于后续循环的开关电压。我们在不同热区域中确定了这种行为的两种不同机制：在相共存区域，V₂O₃中观察到的存储效应源于金属和绝缘畴的空间重新分布；在滞后区域以下，VO₂和V₂O₃中均观察到类似电形成的额外存储效应，这归因于高电场及IMT驱动开关相关的电流激增作用下缺陷的形成和/或迁移。通过使用保护性内部电阻器和多步写入协议，可利用这一通常具有破坏性的过程在宽温度范围内调控开关电压和功率。这些结果为基于IMT的阻变开关器件中开关参数的可控编程提供了途径。
英文摘要
Vanadium Dioxide (VO2) and Vanadium Sesquioxide (V2O3) are Mott insulators that undergo an Insulator-to-Metal Transition (IMT) at ~340K and ~160K, respectively, manifested as an orders-of-magnitude reduction in their electrical resistance. These transitions provide the physical basis for their Volatile Resistive Switching (VRS) behavior, making them promising candidates for threshold-switching devices. Here, we show that the volatile switching in these materials can be strongly affected by non-volatile processes associated with the creation and annihilation of the conducting filament. These processes give rise to pronounced memory effects in which the initial switching voltage substantially exceeds that of subsequent cycles. We identify two distinct mechanisms underlying this behavior in different thermal regimes. In the phase-coexistence regime, a memory effect is observed in V2O3, arising from the spatial redistribution of metallic and insulating domains. Well below the hysteresis regime, an additional electroforming-like memory effect is observed in both VO2 and V2O3 which is attributed to the formation and/or migration of defects under the influence of a high electric field and a current surge associated with the IMT-driven switching. Using a protective internal resistor and a multi-step writing protocol, this normally destructive process can be harnessed to tune the switching voltage and power over a wide temperature range. These results demonstrate a route toward controlled programming of switching parameters in IMT-based resistive switching devices.
Comments22 pages, 8 figures, 12 supplementary pages, 7 supplementary figures
