面向器件耦合的单个T中心的光学线宽窄化
Optical linewidth narrowing for device-coupled single T centers
AI总结：
该研究针对硅中单个T中心因光谱扩散导致的光学线宽过宽问题，采用激光扫描显微镜提供带隙以上光激发，实现70%线宽窄化，通过速率方程模型解释机制，为量子网络应用扫清障碍。
AI中文摘要：
硅中的单个T中心已成为量子网络应用中极具潜力的光学活性自旋。该系统发展的主要障碍之一是其因光谱扩散导致的宽光学线宽，该线宽比其腔增强辐射线宽高两个数量级。我们利用激光扫描显微镜向器件耦合的单个T中心提供带隙以上光激发，解决了这一问题，实现了高达70%的光学线宽窄化。我们将线宽窄化效应归因于光生自由载流子对附近电荷陷阱的填充。我们通过利用脉冲带隙以上激发分析电荷稳定动力学，并开发了一个速率方程模型来描述该动力学，解释观测到的线宽窄化和中心偏移。本工作为控制和减小单个T中心的光学线宽提供了有效途径，消除了推进单个T中心自旋平台用于量子信息和网络应用的主要障碍之一。
英文摘要：
Single T centers in silicon have emerged as promising optically active spins for quantum networking applications. One of the major obstacles to advancing the system is their broad optical linewidth due to spectral diffusion, which is two orders of magnitude larger than their cavity-enhanced radiative linewidth. We tackle this issue by utilizing above-band optical excitation delivered via a laser scanning microscope to device-coupled single T centers, achieving up to 70% optical linewidth reduction. We attribute the linewidth narrowing effect to the filling of nearby charge traps by photo-generated free carriers. We analyze charge stabilization dynamics by exploiting pulsed above-band excitation and develop a rate equation model to describe the dynamics and to explain the observed linewidth narrowing and center shift. This work provides an effective pathway to control and reduce the optical linewidth for single T centers, clearing one of the major roadblocks to advance the single T center spin platform for quantum information and networking applications.
