AI 中文总结
研究WSe₂衬底上菱面石墨烯的反常金属与超导相，发现门空间中存在零电阻超导及有限饱和电阻区域，为理解反常金属提供新平台。
AI 中文摘要
二维超导性在石墨烯基体系中已得到充分证实，许多此类实现显示出非常规配对的证据。然而在几种门控调谐相中，这些相虽呈现清晰的超导特征，电阻却未随温度降低而消失，而是饱和于有限值。本文报道了对WSe₂衬底上菱面石墨烯中该行为的系统研究，发现门空间中存在零电阻超导区域，同时伴有有限饱和电阻的区域。零磁场下，这些区域在门空间中表现为孤立的囊袋，其余区域呈现出极为相似的现象，包括当温度、垂直磁场和电流升高至临界值以上时向正常态的突变转变。小的面内磁场会扩展并合并这些囊袋，且不改变其定性行为，在毫开尔文基温下于零电阻与有限电阻态之间形成清晰边界。有限电阻态重现了反常金属的关键现象学，反常金属是一种在薄膜超导体中已观测数十年但缺乏公认理论解释的状态。超洁净菱面石墨烯的可调性和可重复性对外因解释施加了严格限制，并为理解该行为提供了新平台。
英文摘要
Two-dimensional superconductivity is now well established in graphene-based systems, with many such realizations showing evidence for unconventional pairing. Yet in several of the gate-tuned phases that otherwise exhibit clear signatures of superconductivity, the resistance does not vanish as temperature is lowered, instead saturating at a finite value. Here we report a systematic study of this behavior in rhombohedral graphene on a WSe$_2$ substrate, finding regions of gate space with zero-resistance superconductivity alongside others with finite saturation resistance. At zero magnetic field, these regions appear as isolated pockets in gate space that otherwise exhibit strikingly similar phenomenology, including abrupt transitions to the normal state as temperature, perpendicular magnetic field, and current are raised above critical values. A small in-plane field expands and merges these pockets without qualitatively altering their behavior, producing a sharp boundary at millikelvin base temperature between states of zero or finite resistance. The finite-resistance state reproduces key phenomenology associated with the anomalous metal, a state that has been observed in thin-film superconductors for decades but lacks an accepted theoretical explanation. The tunability and reproducibility of ultra-clean rhombohedral graphene place strong constraints on extrinsic explanations and provide a new platform for understanding this behavior.
Comments20 pages, 15 figures
