GaN射频集成电路与GaAs、硅的物理至电路分析
Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon
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中文总结 AI 辅助
本文从第一性原理分析GaN射频集成电路的物理机制，通过MATLAB模型对比GaN、GaAs和Si在90 GHz内的性能，确定毫米波信号下最优材料平台。
中文摘要 AI 辅助
本文从第一性原理出发，研究射频（RF）集成电路平台从硅迁移至GaAs、再到氮化镓（GaN）的原因。六方非中心对称的GaN晶格具有宏观极化；弹性和压电张量确定AlGaN/GaN界面的束缚面电荷，结合三角阱量子化的泊松方程，得到无掺杂、简并的准二维沟道，浓度约10^13 cm^-2。通过对电子-空穴对产生的能量动量守恒及声子限制的能量弛豫，确定击穿场（3.3 MV/cm）和饱和速度（2.5×10^7 cm/s），二者结合得到与几何无关的极限值V_brf_T = E_cv_sat/(2π)和R_on^sp = 4V_br^2/(μ ε E_c^3)。将这些极限映射到收发前端的低噪声放大器、功率放大器、开关/移相器功能，通过MATLAB器件物理模型对比GaN、GaAs和Si在90 GHz以内的性能，旨在确定哪种材料平台在毫米波频率信号下性能最优。
英文摘要
The migration of radio-frequency (RF) integrated-circuit platforms from silicon to GaAs and now to gallium nitride is derived here from first principles. The hexagonal non-centrosymmetric GaN lattice admits a macroscopic polarization; elasticity and the piezoelectric tensor fix the bound sheet charge at an AlGaN/GaN interface, and Poisson's equation with triangular-well quantisation yields a degenerate quasi-two-dimensional channel of ~10^13 cm^-2 with no doping. Energy-momentum conservation for pair creation and phonon-limited energy relaxation set the breakdown field (3.3 MV/cm) and saturation velocity (2.5 x 10^7 cm/s), which combine into geometry-free limits V_brf_T = E_cv_sat/(2pi) and R_on^sp = 4V_br^2/(muepsilonE_c^3). These limits are mapped onto the low-noise amplifier, power amplifier, and switch/phase-shifter functions of a transmit/receive front end and quantified by a MATLAB device-physics model comparing GaN, GaAs, and Si up to 90 GHz. The purpose of this framework and its simulations is to identify which material platform offers the best performance at millimeter-wave frequency signals.
