AI 中文总结
该研究通过第一性原理Wannier模型结合泛函重整化群模拟，发现M点扭曲双层SnSe2在特定掺杂下可出现扩展s波超导电性，确立其为铁基超导体类的量子模拟平台。
AI 中文摘要
我们研究M谷莫尔材料中电子序与非常规超导电性的出现。从AB堆垛扭曲SnSe2的第一性原理Wannier模型出发，我们采用泛函重整化群模拟处理（门屏蔽）长程库仑相互作用，解析主导费米面不稳定性的动量结构与能量尺度。当在莫尔平带半填充（每个莫尔原胞含3个电子，即ν=3）的反铁磁条纹态上掺杂时，磁序会被谷选择性自旋涨落介导的非常规超导电性取代：大空穴掺杂（ν≈1）会产生具有多种配对对称性的弱耦合超导体，而轻微的电子和空穴掺杂（ν≈2、4）则会稳定自旋单态的扩展s波态，该态受益于与费米能级失谐的虚粒子与空穴态之间的散射。这些发现确立了M点莫尔材料作为量子模拟平台，其现象学与铁基pnictide超导体类具有相似性。
英文摘要
We investigate the emergence of electronic order and unconventional superconductivity in M-valley moiré materials. Starting from a first-principles Wannier model of AB-stacked twisted SnSe2, we tackle the (gate-screened) long-ranged Coulomb interaction with functional renormalization group simulations resolving the momentum structure and energy scales of the leading Fermi surface instabilities. Upon doping an antiferromagnetic stripe state at half-filling ($ν=3$ electrons per moiré unit cell) of the moiré flat bands, magnetic order gives way to unconventional superconductivity mediated by valley-selective spin fluctuations: Large hole doping ($ν\approx1$) leads to weak-coupling superconductors with various pairing symmetries, while slight electron- and hole-doping ($ν\approx2,4$) stabilizes a spin-singlet, extended s-wave state that benefits from scattering between virtual particle and hole states that are detuned from the Fermi level. These findings establish M-point moiré materials as a quantum simulation platform with phenomenological parallels to the class of iron pnictide superconductors.
Comments8 pages, 4 figures, Supplementary Information
