AI 中文总结
本研究针对基于VO₂的弛豫型振荡器，分析其相位噪声来源，发现低频下谱线展宽因潜伏期热波动敏感性升高，且外部方波同步比正弦注入锁定更能改善相位噪声。
AI 中文摘要
基于VO$_2$的弛豫振荡器是一个快速发展的领域，应用于神经形态计算、伊辛机及众多信号处理场景。这类振荡器基于VO$_2$材料在绝缘态与金属态间的快速相变，工作于深度非线性弛豫 regime，该过程受热效应支配，会引发额外电压波动，导致VO$_2$基振荡器信号的谱线宽度显著展宽。本研究深入分析VO$_2$基弛豫振荡器的相位噪声，证明低振荡频率下生成谱线宽度的展宽源于潜伏期对热波动敏感性升高；探究影响振荡器稳定性的噪声类型，表明与外部方波信号同步相比，正弦注入锁定信号能更有效地改善相位噪声。
英文摘要
VO$_2$-based relaxation oscillators form a rapidly developing field that finds applications in neuromorphic computing, Ising machines, and numerous signal processing concepts. These oscillators operate in a deeply nonlinear relaxation regime based on rapid phase transitions between insulating and metallic states in the VO$_2$ material. This process is governed by thermal effects, which lead to additional voltage fluctuations and contribute to a considerably wide spectral linewidth in the VO$_2$-based oscillator signal. In this work, we thoroughly study the phase noise in VO$_2$-based relaxation oscillators and demonstrate that the broadening of the generation spectrum linewidth at low oscillation frequencies is caused by an increased susceptibility to thermal fluctuations during the incubation phase. We explore the types of noise affecting oscillator stability and show that synchronization with an external square-wave signal improves the phase noise more effectively than a sinusoidal-shape injection locking signal.
