AI 中文总结
该研究探讨了极薄硅纳米片晶体管中薄电介质的静态介电常数，分析了纳米结构介电常数与环境的关系，指出光学声子态密度降低对介电常数影响可忽略，认为双栅硅纳米片结构采用体介电常数是合理的。
AI 中文摘要
我们认为，小型（薄且/或窄）半导体和绝缘体纳米结构的静态介电常数强烈依赖于其所处环境，为此我们简要但批判性地综述了现有文献中的电子响应相关研究。关于离子响应，除了综述文献外，我们采用简单模型分析了薄膜中光学声子的限域效应，结果表明，与部分文献的主张相反，光学声子态密度的降低对介电常数的影响可忽略不计。总体而言，我们认为，在双栅硅纳米片这类实际结构中，沟道和栅绝缘层采用体材料介电常数是合理的。
英文摘要
We argue that the static dielectric constant of small (thin and/or narrow) semiconductor and insulator nanostructures depends strongly on the their environment. We do so by considering the electronic response simply reviewing, briefly but critically, the existing literature. Regarding the ionic response, in addition to reviewing the literature, we use a simple model to account for the confinement of optical phonons in thin films and show that the reduction of their density of states has a negligible effect on the dielectric constant, in contrast to some claims found in the literature. In general, we argue that in realistic structures, such as double-gated Si nanosheets, the use of the bulk dielectric constants for both the channel and the gate insulators, is justified.
