AI 中文总结
研究提出用于硅平面技术柔性电子器件的3D岛桥概念，通过嵌入金属桥保护有源组件，经数值模拟和实验验证，该结构在弯曲下TFT性能稳定，9x矩阵展示可扩展性且验证了其可制造性与功能。
AI 中文摘要
本研究提出了一种用于硅平面技术上柔性电子器件的CMOS兼容、完全集成的三维岛桥概念。通过在聚酰亚胺钝化岛矩阵的沟槽内嵌入金属桥，该方法将机械应力定位到桥上，从而保护岛上的有源组件免受机械应力，实现柔性基板上的高性能薄膜晶体管（TFT）。岛之间沟槽中的凹形、弧形填充和背面蚀刻产生独立的3D桥。数值模拟确定最小弯曲半径，揭示弯曲过程中桥内的特征应力分布，桥 - 岛过渡处应力峰值最大。沟槽深度变化调节冯·米塞斯应力，确定可靠性设计参数。实验验证表明TFT在弯曲下能工作，在一系列弯曲半径下阈值电压、亚阈值摆幅和饱和迁移率稳定；更宽的桥机械鲁棒性增强。9x9岛桥矩阵展示了该概念的可扩展性。总体而言，结果验证了由凹形沟槽填充形貌定义三维形状的无拉伸3D金属桥与集成有源器件的可制造性，并确认了所生产柔性基板的机械和电气功能。
英文摘要
This study presents a CMOS-compatible, fully integrated three-dimensional island-bridge concept for flexible electronics on silicon planar technology. By embedding metal bridges within trenches in a polyimide-passivated island matrix, the approach localizes mechanical stress to the bridges whereby active components on the islands are protected from mechanical stress, enabling high-performance thin-film transistors (TFTs) on flexible substrates. A concave, arc-shape forming fill in trenches between the islands and backside etching yield freestanding 3D bridges. Numerical simulations to determine the minimum bending radius reveal a characteristic stress distribution in the bridges during bending, with peak stresses at the bridge-island transitions. Variation of trench depth modulates von Mises stress, identifying design parameters for reliability. Experimental validation demonstrates TFT operation under bending, with stable threshold voltage, subthreshold swing, and saturation mobility across a range of bending radii; broader bridges exhibit enhanced mechanical robustness. A 9x9 island-bridge matrix with addressable integration of TFTs across islands demonstrates the scalability of the concept. Overall, the results verify the manufacturability of stretch-free 3D metal bridges where the three-dimensional shape is defined by the topography of the concave trench filling, with integrated active devices, and confirm the mechanical and electrical functionality of the produced flexible substrates.
