用于囚禁离子量子比特控制的宽带、可单独寻址的二维和三维光子集成电路
A broadband, individually addressing two- and three-dimensional photonic integrated circuit for trapped-ion qubit control
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中文总结 AI 辅助
研究针对囚禁离子量子比特控制中波长传输瓶颈问题，提出结合平面波导透镜与双光子聚合微镜的光子集成电路，可在405 - 880nm寻址三个离子，实现宽带寻址，为囚禁离子技术带来新架构，拓展量子器件设计空间。
中文摘要 AI 辅助
囚禁离子为量子信息处理提供了一个高保真平台，但在大型相互作用区网络中传输多个不同波长仍然是一个瓶颈。传统的自由空间光传输缺乏可扩展性，而片上光栅耦合器的工作带宽窄，增加了电路面积和光学接口复杂性。本文展示了一种能够寻址单个离子的宽带光子集成电路。该电路将平面波导透镜与在晶圆规模上使用双光子聚合制造的微镜相结合。这种实现方式可以在\(\lambda = 405 - 880\)nm范围内寻址三个单个离子，在\(5\,\mu\mathrm{m}\)间距下平均强度串扰为\(-27\)dB。我们在这些器件上方囚禁了\(^{40}\mathrm{Ca}^{+}\)和\(^{138}\mathrm{Ba}^{+}\)离子，表征了与钡离子的光学串扰，并演示了对钙离子的单独再泵浦。这种单片光子架构为囚禁离子技术带来了片上宽带寻址。更一般地说，将增材制造集成到量子器件中有望为实现新型量子架构解锁扩展的设计空间。
英文摘要
Trapped ions provide a high-fidelity platform for quantum information processing, yet delivery of multiple, distinct wavelengths across large networks of interaction zones remains a bottleneck. Conventional free-space light delivery lacks scalability, while on-chip grating couplers suffer from narrow operational bandwidth that increases circuit footprint and optical interfacing complexity. Here we show a broadband photonic integrated circuit capable of addressing individual ions. The circuit combines a planar waveguide lens with a micromirror fabricated using two-photon polymerization at wafer scale. This implementation can address three individual ions from $λ$ = 405 - 880 nm with -27 dB average intensity crosstalk at $5\,μ\mathrm{m}$ pitch. We trap $^{40}\mathrm{Ca}^{+}$ and $^{138}\mathrm{Ba}^{+}$ ions above such devices, characterize optical crosstalk with barium ions, and demonstrate individual repumping of calcium ions. This monolithic photonic architecture brings broadband addressing in an on-chip modality to trapped-ion technology. More generally, integrating additive manufacturing into quantum devices is poised to unlock expanded design space for implementing novel quantum architectures.
