AI 中文总结
研究针对自旋电子技术中传统方法的不足，开发含自旋相关各向异性散射的广义模型，求解博戈留波夫-德热纳方程得电流公式，描述正常金属到半金属输运，经实验验证，改进光谱解释，支持抗干扰自旋源，助力相关技术发展。
AI 中文摘要
自旋电子技术需要高效产生和控制自旋极化电流，传统基于铁磁体的方法对外部磁场敏感。安德列夫反射光谱对测量自旋极化和超导能隙至关重要，但现有理论假设界面散射各向同性，忽略了异质结构中普遍存在的各向异性，导致对材料特性的误解。为此，研究人员开发了一个包含自旋相关各向异性散射的广义模型，扩展了相关形式体系。通过求解具有修正边界条件的博戈留波夫-德热纳方程得到电流公式，该模型能描述从正常金属到半金属的输运，还通过实验验证了模型，有助于改进安德列夫光谱解释并支持抗干扰自旋源。
英文摘要
Spintronic technologies require efficient generation and control of spin-polarized currents. Conventional ferromagnet-based methods suffer from sensitivity to external magnetic fields. Andreev reflection spectroscopy is vital for measuring spin polarization and superconducting gaps, yet prevailing theories assume isotropic interface scattering. This neglects ubiquitous anisotropy in heterostructures, causing misinterpretation of material properties. To resolve this, we develop a generalized model incorporating spin-dependent anisotropic scattering. Introducing distinct interface barriers for spin-up and spin-down electrons extends both the Blonder-Tinkham-Klapwijk formalism and the Chen-Tesanovic-Chien extension. This unified framework describes transport from normal metals to half-metals. Solving the Bogoliubov-de Gennes equations with modified boundary conditions yields current formulae with a transmission probability judgment function identifying dominant spin channels. In non-magnetic metals, interfacial anisotropy generates sizable spin-polarized currents via transmission spin filtering, suppressing Andreev reflection and reducing sub-gap conductance. For positively polarized ferromagnets, anisotropy nonlinearly modulates polarization, enhancing Andreev reflection to a threshold before suppression. Negatively polarized materials exhibit inverse spectra, enabling unambiguous polarization sign determination via conductance comparisons. Epitaxial Co film measurements validate the model, resolving subtle anisotropies. This refines Andreev spectrum interpretation and supports interference-resistant spin sources using non-magnetic platforms, benefiting magnetoresistive devices and superconducting quantum technologies.
Comments15 pages, 5 figures
