AI 中文总结
研究通过高压合成技术提高Mn5Ge3+x晶体居里温度，实现室温下50nm斯格明子的稳定性，利用微磁模拟和磁输运测量等方法，展现其在自旋电子器件应用中的潜力，包括对单个斯格明子的电学操纵和检测。
AI 中文摘要
新型高温超小尺寸斯格明子材料的开发对拓扑自旋电子器件的应用具有重要意义。本研究表明，高压合成技术可将Mn5Ge3+x晶体的居里温度从294K显著提高到350K，这归因于晶格收缩和Ge含量增加的综合作用，密度泛函理论计算支持这一结论。此外，实空间磁成像揭示了室温下直径约50nm的偶极斯格明子的稳定性，微磁模拟与实验观察的拓扑磁织构相符。磁输运测量表明基于斯格明子的器件中不同拓扑磁织构的电学区分潜力。还报道了利用面内电流对受限纳米结构中的单个偶极斯格明子进行确定性操纵。室温超小拓扑磁织构的观察、电学操纵和检测突出了Mn5Ge3+x作为自旋电子器件应用平台的潜力。
英文摘要
The development of new high-temperature ultrasmall-size skyrmion materials holds immense significance for the promising applications of topological spintronic devices. In this study, we demonstrate that a high-pressure synthesis technique can significantly elevate the Curie temperature of Mn5Ge3+x crystals, from 294 K to 350 K. This enhancement is attributed to the combined effects of lattice contraction and increased Ge content, the conclusion supported by Density Functional Theory calculations. Additionally, our real-space magnetic imaging reveals the stability of dipolar skyrmions with diameters of approximately 50 nm at room temperature. Our micromagnetic simulations closely replicate the diverse experimental topological magnetic textures observed. Furthermore, magnetotransport measurements indicate the potential for the electrical distinction between various topological magnetic textures in skyrmion-based devices. We also report deterministic manipulations on single dipolar skyrmions in confined nanostructures by using in-plane currents. The observation, electrical manipulation, and electrical detection of room-temperature ultrasmall topological magnetic textures underscore the potential of Mn5Ge3+x as a promising platform for spintronic device applications.
Journal refSci. China Phys. Mech. Astron. 69, 247511 (2026)
