作为电荷缺陷探测手段的电子穿梭
Electron shuttling as a probe for charge defects
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中文总结 AI 辅助
研究针对硅自旋量子比特受电荷噪声限制且定位两能级涨落器困难问题，提出利用电子穿梭将单个移动自旋变为扫描探针来定位缺陷的方法，相比之前方法扩展性更好，为大硅器件电荷缺陷图谱绘制及相关校准规避提供实用途径。
中文摘要 AI 辅助
硅自旋量子比特是可扩展量子计算的领先平台，但其性能受电荷噪声限制，电荷噪声多源于两能级涨落器（TLFs），单个TLF位置通常未知，现有定位方法不适用于大尺寸设备。本文表明电子穿梭可将单个移动自旋转变为单个缺陷的扫描探针。通过在一定距离内穿梭自旋并跟踪其相干性损失，能沿通道定位缺陷并限制其开关速率和涨落幅度。该方法比以前的方法扩展性更好，无需额外硬件，为绘制大型硅器件的电荷缺陷图谱提供了实用途径，可实现基于穿梭架构的缺陷感知校准和规避。
英文摘要
Silicon spin qubits are a leading platform for scalable quantum computing, but their performance is limited by charge noise, widely attributed to two-level fluctuators (TLFs). The location of individual TLFs is generally unknown, and existing methods to localise them does not scale favourably with device size. Here, we show that electron shuttling turns a single mobile spin into a scanning probe of individual defects. We show that by shuttling a spin over a range of distances and tracking its coherence loss, one can localise defects along the channel and constrain their switching rate and fluctuation amplitude. Because one shuttled electron sweeps an extended region, the approach scales more favourably than previous methods. Our protocol requires no additional hardware and provides a practical route to mapping the charge-defect landscape of large silicon devices, enabling defect-aware calibration and avoidance in shuttling-based architectures.
