微机电光子集成忆阻器

中文摘要 AI 辅助

嵌入光子集成电路（PIC）的可编程光学忆阻器正成为高速光存储和内存光计算应用的重要技术。现有光学忆阻器技术存在耐久性、材料引起的光学损耗、大规模可重构性或实际应用的制造良率等挑战。本文介绍一种基于CMOS铸造厂生产的光子集成微机电（MEMS）悬臂的模拟可编程光子忆阻器。该忆阻器由低损耗氮化硅波导组成，无需额外后端材料集成，通过静电 - 压电效应全电编程。展示了高达5位的相位存储级别、50 kbit/s的编程速度、应变辅助非易失性寿命>1小时、>10亿次循环耐久性以及数百万次伪随机位序列的应力测试写读循环。还通过简单电子刷新电路将存储寿命延长至数天，展示了静态或动态配置的概念验证光学随机存取存储器。我们的MEMS - 光子技术是迈向实用光学忆阻器的重要一步。

英文摘要

Programmable optical memristors embedded in photonic integrated circuits (PICs) are emerging as an important technology for high-speed optical storage and in-memory optical computing applications. These devices provide multi-level, non-volatile storage of optical phases that can be interrogated at the speed of light, enabling parallel data readout or energy-efficient multiply-accumulate operations in artificial neural networks. However, there remains several outstanding challenges with existing optical memristor technology including durability, material-induced optical losses, large-scale reconfigurability, or fabrication yield for realistic applications. Here we introduce an analog-programmable photonic memristor based on photonic integrated micro-electromechanical (MEMS) cantilevers produced in a CMOS foundry. The memristor consists of low-loss silicon nitride waveguides, requires no additional back-end materials integration, and is all electrically programmed with electrostatic-piezoelectric forces. We demonstrate up to 5-bit phase storage levels, 50 kbit/s programming speeds, strain-assisted non-volatility lifetimes >1 hour, >1 billion cycle endurance, and stress-tested millions of write-read cycles with pseudorandom bit sequences. We further extend the memory lifetime to several days with simple electronic refresh circuits in a portable battery-powered module, demonstrating a proof-of-concept optical random-access memory in static or dynamic configurations. Our MEMS-photonics technology represents an important step toward practical optical memristors.

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24 pages, 6 figures, 9 supplementary figures