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超导多层谐振器中的磁记忆电感

Magnetically memorable inductance in superconducting multilayer resonators

R. Tyumenev, D. S. Kalashnikov, B. V. Fradkin, A. A. Neilo, A. G. Shishkin, N. V. Klenov, I. I. Soloviev, A. A. Golubov, M. Yu. Kupriyanov, I. A. Golovchanskiy, V. S. Stolyarov, A. S. Sidorenko, S. V. Bakurskiy

arXiv 2607.21147首次发表:更新:

AI 中文总结

研究超导多层谐振器中的磁记忆电感,通过制造基于特定多层的裂环谐振器并微波表征,利用钴层磁化方向反转实现谐振频率非易失性变化,证明其可作为超导电路的现场可编程电感元件。

AI 中文摘要

具有可调动态电感的超导体-铁磁体混合结构是神经形态和量子计算电路的有前途的元件。我们报告了基于Nb/Co/Nb/Co/Nb/Al自旋触发多层的裂环谐振器的制造和微波表征,并展示了其谐振特性上的非易失性自旋阀效应。钴层相对磁化方向的反转在零外加磁场下产生高达4 MHz的谐振频率可重复偏移,对应于结构动态电感的变化。结果表明,与没有该层的结构相比,并入近邻化铝覆盖层可将平行和反平行磁态之间的电感对比度提高约三倍。实验结果与基于乌萨德尔方程的微观模型在定量上一致。在零场下展示的谐振频率磁记忆将自旋触发多层确立为用于超导数字和神经形态电路的可行现场可编程电感元件。

英文摘要

Superconductor-ferromagnet hybrid structures with tunable kinetic inductance are promising elements for neuromorphic and quantum computing circuits. We report the fabrication and microwave characterization of split-ring resonators based on Nb/Co/Nb/Co/Nb/Al spin-trigger multilayers and demonstrate a non-volatile spin-valve effect on their resonant properties. Reversal of the relative magnetization orientation of the cobalt layers produces a reproducible shift of the resonant frequency up to 4 MHz at zero applied magnetic field, corresponding to a change in the kinetic inductance of the structure. The incorporation of a proximitized aluminum overlayer is shown to enhance the inductance contrast between the parallel and antiparallel magnetic states by a factor of approximately three relative to structures without this layer. The experimental results are in quantitative agreement with a microscopic model based on the Usadel equations. The demonstrated magnetic memory of the resonant frequency at zero field establishes spin-trigger multilayers as viable field-programmable inductive elements for superconducting digital and neuromorphic circuits.

Comments9 pages, 7 figures + Suppl. Mat

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