Eu$_5$In$_2$As$_6$顺磁相中的磁阻存储器
Magnetoresistive Memory in the Paramagnetic Phase of Eu$_5$In$_2$As$_6$
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中文总结 AI 辅助
研究在Eu$_5$In$_2$As$_6$顺磁相中发现新型磁阻存储器，其电阻率依赖磁场大小和历史。通过研究电阻率与温度、磁场、时间的关系，揭示可能存在隐藏序或短程关联波动相，为量子传感和存储技术提供新平台。
中文摘要 AI 辅助
对施加磁场敏感响应的磁阻材料是现代数据存储技术的核心。本文我们揭示了Eu$_5$In$_2$As$_6$中的一种新型磁阻存储器（MRM），其电阻率不仅取决于施加磁场的大小，还取决于磁场历史。这种效应仅在两类强关联电子系统中报道过：钙钛矿锰氧化物和焦绿石铱酸盐，且都在磁有序相中观察到。而Eu$_5$In$_2$As$_6$中的MRM在反铁磁转变温度两倍时出现，处于顺磁相。电阻率的温度、磁场和时间依赖性表明，隐藏序或具有短程关联的波动相是该效应的基础。我们的结果为量子传感和存储技术提供了新平台，并鼓励在相关材料中寻找MRM。
英文摘要
Magnetoresistive materials that respond sensitively to applied fields are central to modern data storage technologies. Here we unveil a novel Magnetoresistive Memory (MRM) in Eu$_5$In$_2$As$_6$, where the electrical resistivity depends not only on the magnitude but also on the history of the applied magnetic field. Such an effect has been reported in only two classes of strongly correlated electron systems: perovskite manganites and pyrochlore iridates. In both cases, the effect has been observed in the magnetically ordered phase. It has been attributed to metastable magnetic states in manganites and conducting domain walls in iridates. Remarkably, the MRM in Eu$_5$In$_2$As$_6$ onsets at twice the antiferromagnetic transition temperature, well within the paramagnetic phase. The temperature, field, and time dependence of resistivity suggest that either a hidden order or a fluctuating phase with short-range correlations underlies this effect. Our results offer MRM as a new platform for quantum sensing and memory technologies, and encourage searching for MRM in related materials.
