AI 中文总结
研究二维半导体双层中混合激子散射，构建赝势并用于耦合通道散射积分方程进行非微扰计算，发现相互作用强度随能量增长、受介电屏蔽影响，且散射强度可通过斯塔克位移电调谐。
AI 中文摘要
我们考虑二维半导体双层中混合激子的相互作用，其中空间直接和间接激子通过层间电荷载流子隧穿杂交。从微观电子 - 空穴描述出发，构建激子 - 激子相互作用的实际赝势，并将其用作耦合通道散射积分方程的输入。这使得能对混合激子散射进行非微扰计算，突出了能量依赖散射和通道混合的重要性。尤其表明混合激子相互作用强度随能量增加快速增长，源于间接激子成分。还证明介电屏蔽以不同方式影响直接和间接通道，导致不同介电环境下相互作用强度明显不同。最后表明混合激子散射强度可通过斯塔克位移电调谐，其控制直接 - 间接失谐及两种激子模式的杂交。
英文摘要
We consider the interactions of hybrid excitons in a two-dimensional semiconductor bilayer, where spatially direct and indirect excitons are hybridized by interlayer charge-carrier tunneling. Starting from a microscopic electron-hole description, we construct realistic pseudopotentials for exciton-exciton interactions and use them as inputs to a coupled-channel scattering integral equation. This enables non-perturbative calculations of hybrid-exciton scattering beyond standard perturbative theories, and highlights the importance of energy-dependent scattering and channel mixing. In particular, we show that the interaction strength of hybrid excitons exhibits a rapid growth with increasing energy, which we find is inherited from their indirect-exciton component. We further demonstrate that dielectric screening affects the direct and indirect channels in distinct ways, leading to markedly different interaction strengths across experimentally relevant dielectric environments. Finally, we show that the hybrid-exciton scattering strength can be electrically tuned via the Stark shift, which controls the direct-indirect detuning and hence the hybridization of the two exciton modes.
Comments18 pages, 9 figures
