AI 中文总结
研究利用光子关联光谱探究关联电子系统临界涨落，通过研究含单层h-BN间隔层的双MoSe2层半导体莫尔材料，测量层间电子动力学，为获取电子相变相关动力学指数提供新方法。
AI 中文摘要
在多体物理中，表征关联电子相之间的相变、提取其临界指数并确定其普适类是核心关注点。本文提出并证明光子关联光谱可用于深入了解临界电子密度涨落的本质。研究了由单层h-BN间隔层隔开的两个MoSe2层组成的半导体莫尔材料，通过散射光子的二阶关联函数测量层间电子动力学。在伊辛型层赝自旋相变开始时，大量电子在层间的关联转移导致一层激子共振散射光中的光子聚束。这些测量为利用光子关联作为获取与电子相变相关的动力学指数的方法铺平了道路。
英文摘要
Characterizing phase transitions between correlated electronic phases, extracting their critical exponents, and identifying their universality class are of central interest in many-body physics. Here, we propose and demonstrate that photon correlation spectroscopy can be used to gain insight into the nature of critical electronic density fluctuations. We study a semiconductor moiré material consisting of two MoSe2 layers separated by a monolayer h-BN spacer and measure interlayer electron dynamics via the second-order correlation function of the scattered photons. The correlated transfer of large numbers of electrons between the layers at the onset of an Ising-type layer pseudo-spin phase transition leads to photon bunching in light scattered by the exciton resonance of one layer. Our measurements pave the way for using photon correlations as a method to access dynamical exponents associated with electronic phase transitions.
Comments10 pages, 5 figures
