AI 中文总结
研究旨在解决硅中缺乏明亮电信波段自旋-光子发射器的问题，通过展示Al1中心，利用同位素纯化器件实现高纯度单光子发射等，解析相关特性，确立其为明亮电信波段自旋-光子界面，为集成量子网络提供平台。
AI 中文摘要
硅是可扩展量子光子学的理想宿主，但缺乏具有光学可寻址自旋态的明亮电信波段发射器限制了其在自旋-光子界面中的应用。本文展示了硅中的铝-碳缺陷Al1中心，作为具有基态自旋的明亮波导集成单光子发射器。利用同位素纯化的绝缘体上硅纳米光子器件，分离出单个Al1中心，在不进行背景扣除的情况下观察到高纯度单光子发射，$g^{(2)}(0)=0.04$。时间分辨光致发光光谱显示激发态寿命为135 ns，比T中心短近一个数量级。共振光致发光激发测量进一步解析了零声子跃迁，显示出窄至47 MHz的均匀线宽，比T中心窄三倍。通过磁光光谱，解析了束缚激子流形的自旋相关跃迁，实现了自旋选择性光泵浦，满足了量子态初始化和读出的前提条件。这些结果确立了Al1中心作为硅光子学中明亮电信波段自旋-光子界面的地位，并为集成量子网络引入了一个有前景的平台。
英文摘要
Silicon is an attractive host for scalable quantum photonics, but the absence of bright telecom-band emitters with optically addressable spin states has limited its use for spin-photon interfaces. Here we demonstrate the Al1-center, an aluminum--carbon defect in silicon, as a bright waveguide-integrated single-photon emitter with a ground-state spin. Using isotopically purified silicon-on-insulator nanophotonic devices, we isolate individual Al1-centers and observe high-purity single-photon emission with $g^{(2)}(0)=0.04$ without background subtraction. Time-resolved photoluminescence spectroscopy reveals a fast excited-state lifetime of 135 ns, nearly an order of magnitude shorter than the benchmark provided by the well-studied T-center. Resonant photoluminescence excitation measurements further resolve the zero-phonon transition and reveal a narrow homogeneous linewidth reaching 47 MHz, threefold narrower than the T-center under comparable temperature. Through magneto-optical spectroscopy, we resolve the spin-dependent transitions of the bound-exciton manifold and achieve spin-selective optical pumping, fulfilling the prerequisite for quantum state initialization and readout. These results establish the Al1-center as a bright telecom-band spin-photon interface in silicon photonics and introduce a promising platform for integrated quantum networks.
