通过反向注入光电压测量高效光电阴极中的电子逃逸概率
Electron escape probability in high-efficiency photocathodes measured by reverse-injection photovoltage
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences（俄罗斯科学院西伯利亚分院列扎诺夫半导体物理研究所）
- Novosibirsk State University（新西伯利亚国立大学）
- Novosibirsk State Technical University（新西伯利亚国立技术大学）
机构由 AI 辅助整理，请以论文原文为准。
AI总结：
研究如何测定高效半导体光电阴极中电子逃逸概率，提出基于反向注入光电压变化的方法，并通过在p-GaN(Cs,O)光电阴极上测量光发射量子效率变化进行演示。
AI中文摘要：
电子通过发射表面的传输特性对于优化现有和开发新型光电阴极至关重要。本文提出并开发了一种直接测定高效半导体光电阴极中电子逃逸概率的方法。该方法基于将发射的光电子反向注入光电阴极（“反向注入”）时表面光电压的变化，这是由外部电场的极性反转引起的。我们通过测量发射电子反向注入时的光发射量子效率的变化，在具有负有效电子亲和力的p-GaN(Cs,O)光电阴极上演示了该方法。
英文摘要：
The characterization of electron transfer through the emitting surface is of crucial importance for optimizing existing and developing new photocathodes. Here we propose and develop a method for the direct determination of the electron escape probability in high-efficiency semiconductor photocathodes. The proposed method is based on the variations in the surface photovoltage upon the injection of emitted photoelectrons back into a photocathode (``reverse injection"), which is induced by the polarity reversal of the external electric field. We demonstrate the method on \textit{p}-GaN(Cs,O) photocathodes with negative effective electron affinity by measuring the evolution of photoemission quantum efficiency upon the reverse injection of emitted electrons.
