AI 中文总结
研究利用65纳米CMOS工艺，通过功能划分金属堆栈构建多模态量子材料表征平台，可进行低温磁化率测量、NV中心光探测磁共振，降低功率需求且兼容原位电子束成像，建立了可扩展、可代工制造的平台。
AI 中文摘要
量子材料实验越来越依赖微波、电学、热学、光学和结构探针，但这些功能通常由定制硬件组装而成，限制了可重复性和可扩展性。本文表明，通过将65纳米CMOS工艺的金属堆栈在1平方毫米的面积内功能划分为微波、热学和电学子系统，可将其重新用作被动的、可代工制造的表征平台。集成射频架构能够在1.75K温度下对Fe3GeTe2异质结构进行低温磁化率测量，无需针对特定样品制造。还展示了在4-9dBm微波功率下对比度>20%的NV中心光探测磁共振（ODMR），相对于传统基于天线的方法，功率需求降低20-25dB，同时保持2-3uT/sqrt(Hz)的灵敏度。此外，证实与原位电子束成像兼容，器件运行时图像质量无明显下降。这些结果建立了一个用于多模态量子传感和材料表征的可扩展、可代工制造的平台。
英文摘要
Quantum materials experiments increasingly rely on microwave, electrical, thermal, optical, and structural probes, but these capabilities are typically assembled from custom hardware that limits reproducibility and scalability. Here we show that a commercial 65-nm CMOS process can be repurposed as a passive, foundry-manufacturable characterization platform by functionally partitioning its metal stack into microwave, thermal, and electrical subsystems within a 1 mm2 footprint. The integrated RF architecture enables cryogenic magnetic susceptibility measurements of Fe3GeTe2 heterostructures at 1.75 K without sample-specific fabrication. We further demonstrate NV-center optically detected magnetic resonance (ODMR) with >20% contrast at 4-9 dBm microwave power, reducing power requirements by 20-25 dB relative to conventional antenna-based approaches while maintaining sensitivities of 2-3 uT/sqrt(Hz). We additionally confirm compatibility with in-situ electron-beam imaging, showing no measurable degradation in image quality upon device operation. These results establish a scalable, foundry-manufacturable platform for multimodal quantum sensing and materials characterization.
