使用CO2激光退火在Si上实现Ce:YIG薄膜的局部结晶用于集成非互易光子器件应用
Localized crystallization of Ce:YIG thin films on Si using CO2 laser annealing for integrated nonreciprocal photonic device applications
浏览论文内容
中文总结 AI 辅助
研究使用CO2激光退火探索Ce:YIG薄膜用于集成光子器件应用的结晶和磁光特性，并制备了基于SiN上Ce:YIG薄膜的MZI型光隔离器，实现了一定的饱和法拉第旋转、传播损耗、隔离比和插入损耗。
中文摘要 AI 辅助
激光退火（LA）技术已成为在半导体衬底上实现磁光（MO）石榴石薄膜局部结晶的有效方法。然而，尚未有研究使用LA技术探索用于集成光子器件应用的铈取代钇铁石榴石（Ce:YIG）薄膜的结晶和磁光特性。本研究对沉积在SiO2衬底和氮化硅光子波导上的Ce:YIG薄膜进行激光退火，用于集成非互易光子器件应用。在SiO2衬底上生长的薄膜中成功观察到石榴石相，在激光退火的Y3Fe5O12种子层顶部溅射Ce:YIG薄膜并进行激光退火制备了SiN波导。发现氧化Si衬底上Ce:YIG薄膜的磁光特性与快速热退火（RTA）制备的相当。基于SiN上Ce:YIG薄膜制造了马赫-曾德尔干涉仪（MZI）型光隔离器，在1552.7nm波长下表现出-2317.7deg/cm的饱和法拉第旋转和188.2dB/cm的传播损耗，实现了27.1dB的隔离比和10.1dB的插入损耗。
英文摘要
Laser annealing (LA) technique has emerged as an effective method for localized crystallization of magneto-optical (MO) garnet thin films on semiconductor substrates. However, no studies have explored the crystallization and magneto-optical (MO) properties of cerium-substituted yttrium iron garnet (Ce:YIG, Ce1Y2Fe5O12) thin films for integrated photonic device applications using LA technique. In this study, we provide a comprehensive investigation into the laser annealing of Ce:YIG films deposited on SiO2 substrates and silicon nitride photonic waveguides for integrated nonreciprocal photonic device applications. Garnet phase was successfully observed in films grown on SiO2 substrates, and SiN waveguides with laser annealing of sputtered Ce:YIG films on top of a laser annealed Y3Fe5O12 seed layer. The magneto-optical (MO) properties of Ce:YIG films on oxidized Si substrates were found to be comparable to those prepared by rapid thermal annealing (RTA). A Mach-Zehnder Interferometer (MZI) type optical isolator based on Ce:YIG film on SiN was fabricated, exhibiting a saturation Faraday rotation of -2317.7 deg/cm and propagation loss of 188.2 dB/cm. Isolation ratio of 27.1 dB and insertion loss of 10.1 dB were achieved at 1552.7 nm wavelength.
