AI 中文总结
研究高米勒指数近邻表面多原子台阶周期性确定难题，通过高斯差分法从原始扫描隧道显微镜数据确定近邻Si(5\,5\,6)和Si(5 5 7)单晶晶片上三步阵列周期，精度接近原子间距离，还可用于其他近邻表面分析。
AI 中文摘要
可靠确定高米勒指数近邻表面上多原子台阶的周期性常常因以下因素而复杂化：一是存在相对于扫描平面大幅倾斜的较窄平台，二是由于蠕变和压电扫描仪校准不当导致横向不可避免的失真。我们认为，可以从原始扫描隧道显微镜数据中确定近邻Si(5\,5\,6)和Si(5 5 7)单晶晶片上三步阵列的周期，无需预先校正，精度接近原子间距离。我们证明，通过高斯差分法从原始地形图像导出的差分图的傅里叶峰强度强烈依赖于有序三步阵列的周期。第九个傅里叶峰的这种抑制表明，在投影到Si(1 1 1)平台平面上时，规则的三步阵列周期为$18b = 5.99$nm，其中$b = 0.333$nm是$[\bar{1}\,\bar{1}\,2]$方向上$1\times 1$晶格原子行之间的距离。这意味着名义上(5\,5\,7)取向的Si晶片可能局部对应于Si(8 8 11)取向。该方法可应用于对其他具有窄和宽平台且包含整数个Si(1 1 1)$7\times 7$晶胞的近邻表面进行精确分析。
英文摘要
Reliable determination of the periodicity of multiatomic steps on high-Miller-index vicinal surfaces is often complicated by (i) the presence of relatively narrow terraces tilted at large angles relative to the scanning plane, and (ii) unavoidable distortions in the lateral direction resulting from creep and improper calibration of a piezo scanner. We argue that the period of the triple-step arrays on vicinal Si(5\,5\,6) and Si(5 5 7) single-crystal wafers can be determined from raw scanning tunneling microscopy data, without preliminary corrections, with precision approaching the interatomic distance. We demonstrate that the intensity of the Fourier peaks of the differential maps, derived from raw topography images by the difference-of-Gaussians approach, strongly depends on the period of the ordered triple-step arrays. This suppression of the ninth Fourier peak indicates that the regular array of triple steps has a period of $18b=5.99$ nm in projection onto the Si(1 1 1) terrace plane, where $b=0.333$ nm is the distance between atomic rows of the $1\times 1$ lattice in the $[\bar{1}\,\bar{1}\,2]$ direction. This means that the nominally (5\,5\,7)-oriented Si wafers may correspond locally to the Si(8 8 11) orientation. The method can be applied to the precise analysis of other vicinal surfaces with narrow and wide terraces containing an integer number of Si(1 1 1)$7\times 7$ unit cells.
Comments11 pages, 10 figures
