AI 中文总结
该研究旨在为亚开尔文量子比特读出链设计Ku波段低温LNA，采用四级共源共栅结构，通过平衡-不平衡变压器耦合、Q增强谐振回路及压控交叉耦合负gm单元实现，在2.5K下实现低噪声温度和低功耗。
AI 中文摘要
本文介绍了一种在GlobalFoundries（GF）130CBIC SiGe BiCMOS中实现的亚毫瓦Ku波段低温低噪声放大器（LNA），用于在Still阶段集成JPA和SiGe LNA的亚开尔文量子比特读出链。四级共源共栅LNA具有平衡-不平衡变压器耦合的级间匹配，带有由2位开关控制的Q增强谐振回路用于频率调谐以及压控交叉耦合负gm单元。在每个温度阶段优化Q单元的工作点以在稳定条件下实现最佳带内性能。在2.5K下进行初步演示时，LNA在12 - 18GHz范围内实现了约14K的平均噪声温度，在16.5GHz左右达到28dB的峰值增益，同时仅消耗0.74mW。据作者所知，这是Ku波段低温SiGe LNA报道的最低直流功耗。
英文摘要
This paper presents a sub-milliwatt K$_u$-band cryogenic low-noise amplifier (LNA) implemented in GlobalFoundries (GF) 130CBIC SiGe BiCMOS, intended for a sub-Kelvin qubit readout chain integrating a JPA and SiGe LNA on the Still stage. The four-stage cascode LNA features balun-coupled interstage matching with a Q-enhanced resonance tank controlled by 2-bit switches tank for frequency tuning and a voltage-controlled cross-coupled negative-$g_m$ cell. The operating point of the Q-cell is optimized at each temperature stage to achieve the best in-band performance under a stable condition. Characterized at 2.5 K for the initial demonstration, the LNA achieves an average noise temperature of $\sim$14 K across 12-18 GHz and 28 dB peak gain around 16.5 GHz, while consuming only 0.74 mW. To the authors' knowledge, this is the lowest reported DC power for a K$_u$-band cryogenic SiGe LNA.
CommentsAccepted to IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), October 11--14, 2026
