AI 中文总结
研究铜功率金属化中热机械载荷相关的退化热点，采用扫描三维X射线衍射测量与热机械晶体塑性模拟相结合的方法，为基于微观结构和物理的铜金属化可靠性评估奠定基础。
AI 中文摘要
金属化层在现代功率半导体器件的性能和可靠性中起着关键作用。在短路事件中，功率金属化层的快速加热会引起热机械不相容应力，这可能导致材料退化并影响器件性能。在这项工作中，使用实验与计算相结合的方法研究了与铜功率金属化中的热机械载荷相关的潜在退化热点。扫描三维X射线衍射测量与热机械晶体塑性模拟相结合，以探测快速循环加载过程中晶粒分辨塑性变形的演变。这种综合方法为控制退化热点形成的微观结构过程提供了见解，为未来基于微观结构和物理的铜金属化可靠性评估奠定了基础。
英文摘要
Metallization layers play a key role in the performance and reliability of modern power semiconductor devices. During short-circuit events, rapid heating of power metallization layers induces thermomechanical incompatibility stresses, which may contribute to material degradation and impact device performance. In this work, potential degradation hotspots associated with thermomechanical loading in Cu power metallization are investigated using a combined experimental--computational approach. Scanning three-dimensional X-ray diffraction measurements are coupled with thermomechanical crystal plasticity simulations to probe the evolution of grain-resolved plastic deformation during rapid cyclic loading. This integrated approach provides insight into the microstructural processes governing degradation hotspot formation, laying the groundwork for future microstructure-informed, physics-based reliability assessment of Cu metallization.
Comments7 pages, 4 figures, submitted to Microelectronic Engineering (ESREF 2026 Special Issue)
