AI 中文总结
研究硒碘半导体中结构演化与载流子输运的关系,通过结构弛豫实现毫秒级红外光电探测,其响应时间4.3 ms,具备宽温成像能力,确立结构弛豫为调控载流子输运策略,使SeI2成为红外探测和热成像的有前景平台。
AI 中文摘要
非晶和部分结晶半导体的光电性能受结构无序强烈影响,建立结构演化与载流子输运的直接关联具有挑战性。本文表明硒碘(SeI2)的固态光电响应由其从亚稳态玻璃相转变为有序层状结构决定。垂直分辨输运测量揭示厚SeI2薄膜中显著的深度依赖电导率。固化后玻璃态SeI2网络载流子输运缓慢且有持续光电导性,长时间结构弛豫后,材料输运显著增强,实现了4.3 ms响应时间的毫秒级红外光电探测等。空间光电流映射表明尽管有自组装层状形态但载流子收集高度均匀,红外热成像证实了宽温度范围的实际成像能力。这些结果确立了结构弛豫是调控硒基半导体载流子输运的有力策略,并将SeI2定位为用于红外光电探测和热成像的有前景的可溶液加工平台。
英文摘要
The optoelectronic performance of amorphous and partially crystalline semiconductors is strongly governed by structural disorder, yet establishing direct correlations between structural evolution and carrier transport remains challenging. Here, we show that the solid state optoelectronic response of selenium iodine (SeI2) is dictated by its transformation from a metastable glassy phase into an ordered lamellar structure. Vertically resolved transport measurements reveal pronounced depth-dependent electrical conductivity within thick SeI2 films, arising from compositional and structural inhomogeneity developed during solidification. Immediately after solidification, the glassy SeI2 network exhibits sluggish carrier transport and persistent photoconductivity. Upon prolonged structural relaxation, however, the material undergoes significant transport enhancement, enabling millisecond-scale infrared photodetection with a response time of 4.3 ms, stable operation up to 8 kHz modulation frequency, and shot-noise-limited detectivities of 108 Jones at 1550 nm and 1011 Jones in the visible. Spatial photocurrent mapping demonstrates highly uniform carrier collection despite the self-assembled lamellar morphology, while infrared thermal imaging confirms practical imaging capability over a broad temperature range. These results establish structural relaxation as a powerful strategy for engineering carrier transport in selenium-based semiconductors and position SeI2 as a promising solution-processable platform for infrared photodetection and thermal imaging.
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