一款集成注入锁定振荡器移相器的140GHz直接升余弦包络整形发射机
A 140-GHz Direct Raised-Cosine Envelope-Shaping Transmitter with Integrated ILO Phase Shifter
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中文总结 AI 辅助
介绍90nm SiGe BiCMOS工艺的140GHz发射机，通过直接合成射频包络状态放宽传统要求，数据速率达8Gb/s且旁瓣抑制34dB。集成注入锁定振荡器相位调谐路径，输出功率2dBm，结合直接射频包络整形与宽范围精细相位控制，用于太赫兹无线链路。
中文摘要 AI 辅助
本文介绍了一款采用90nm SiGe BiCMOS工艺的140GHz发射机，具有类似直接升余弦的包络整形和宽范围相位调谐功能。该架构通过直接合成近似升余弦波形的3电平及5电平射频包络状态，放宽了传统基带脉冲整形和高速数模转换器要求，调制动态范围达23dB。测量结果表明数据速率高达8Gb/s，旁瓣抑制达34dB。还集成了注入锁定振荡器相位调谐路径，提供22.5°数字相位分辨率及超360°连续模拟调谐。该发射机输出功率高达2dBm，为太赫兹无线链路结合了直接射频包络整形与宽范围精细相位控制。
英文摘要
A 140-GHz transmitter with direct raised-cosine-like envelope shaping and wide-range phase tuning is presented in 90-nm SiGe BiCMOS. The proposed architecture relaxes conventional baseband pulse shaping and high-speed digital-to-analog converters by directly synthesizing 3-level and 5-level RF envelope states that approximate a raised-cosine waveform, enabled by a 23-dB modulation dynamic range. Measured results demonstrate data rate up to 8 Gbpers with 34-dB sidelobe suppression. To support scalable phased-array applications, an injection-locked-oscillator phase-tuning path is also integrated, providing 22.5deg digital phase resolution together with continuous analog tuning over more than 360 deg. The transmitter achieves up to 2 dBm output power and combines direct RF envelope shaping with wide-range fine phase control for sub-THz wireless links
