金刚石中单个浅注入NV中心的光电读出和拉姆齐干涉测量
Photoelectrical readout and Ramsey interferometry of single shallowly implanted NV centers in diamond
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中文总结 AI 辅助
研究金刚石中浅注入NV中心的光电读出，通过对其电子自旋进行相干控制，实现了光电测量的拉姆齐 $T_2^*$ 与传统荧光读出一致，且发现过生长可抑制背景光电流，为芯片集成等纳米级传感和自旋寄存器提供可行途径。
中文摘要 AI 辅助
金刚石中氮空位（NV）中心电子自旋态的光电读出因其相较于传统荧光读出的诸多优势而备受关注。与光子速率相比更高的电荷载流子速率以及检测方案在芯片上的集成，可显著推动金刚石中色心的量子传感和计算。此前，光电读出已在NV中心集合体或超纯金刚石衬底深处的单个NV中心上进行。然而，许多应用需要人工创建和精确放置浅NV中心，对此类中心的光电检测颇具挑战。本文展示了对被金刚石过生长掩埋的注入浅（约10纳米）NV中心电子自旋的光电读出和相干控制。光电测量的拉姆齐 $T_2^*$ 与传统荧光读出一致，且对浅注入和深生长的NV中心而言，均未显示出对读出光电流的可测量依赖性。我们还发现过生长通过抑制背景光电流改善了光电读出。这些结果确立了光电读出作为基于工程化浅NV中心的芯片集成、电检测纳米级传感和自旋寄存器的可行途径。
英文摘要
Photoelectrical readout of the electronic spin state of the nitrogen-vacancy (NV) center in diamond is attracting significant interest due to the numerous advantages it possesses compared with conventional fluorescence readout. The higher charge carrier rate compared to the photon rate and the integration of the detection scheme on a chip can significantly advance quantum sensing and computing with color centers in diamond. Until now, photoelectric readout has been performed on ensembles of NV centers or single NV centers deep in ultrapure diamond substrates. However, many applications require the artificial creation and precise placement of shallow NV centers, and photoelectric detection of such centers has been challenging. Here we demonstrate photoelectrical readout and coherent control of the electronic spin of implanted shallow ($\sim$10 nm) NV centers buried by diamond overgrowth. The photoelectrically measured Ramsey $T_2^*$ agrees with conventional fluorescence readout and shows no measurable dependence on the readout photocurrent, for both shallow implanted and deep ingrown NV centers. We further find that overgrowth improves photoelectric readout by suppressing the background photocurrent. These results establish photoelectric readout as a viable route to chip-integrated, electrically detected nanoscale sensing and to spin registers based on engineered shallow NV centers.
